Image sensor and semiconductor device including the same

• US 20110001205A1
• Filed: 06/23/2010
• Published: 01/06/2011
• Est. Priority Date: 07/06/2009
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Sul, Sang-Chul, Lee, Myung-Bok, Jin, Young-Gu, Park, Yoon-Dong
• Application Number:
  US12/801,745
• Publication Number:
  US 20110001205A1
• Time in Patent Office: Days
• US Class Current: 257/432
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14625 Optical elements or arrangements associated with the device
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14629 Reflectors
• CPC Class Codes: H01L 31/02162 for filtering or shielding light, e.g. multicolour filters for photodetectors
• CPC Class Codes: H04N 25/131 including elements passing infrared wavelengths
• CPC Class Codes: H04N 25/135 based on four or more different wavelength filter elements
• CPC Class Codes: H04N 25/702 SSIS architectures characterised by non-identical, non-equidistant or non-planar pixel layout
• CPC Class Codes: H04N 5/2226 Determination of depth image, e.g. for foreground/background separation determining depth by image analysis in general G06T7/50; segmentation by image analysis in general G06T7/10

Abstract

Example embodiments relate to a three-dimensional image sensor including a color pixel array on a substrate, a distance pixel array on the substrate, an RGB filter on the color pixel array and configured to allow visible light having a first wavelength to pass, a near infrared light filter on the distance pixel array and configured to allow near infrared light having a second wavelength to pass, and a stack type single band filter on the RGB filter and the near infrared light filter and configured to allow light having a third wavelength between the first wavelength and the second wavelength to pass. According to example embodiments, a semiconductor device may include a color pixel array on a substrate; a distance pixel array on the substrate; a light-inducing member on the color pixel array and the distance pixel array; a RGB filter on the light-inducing member and configured to allow visible light to pass; a near infrared light filter on the light-inducing member and configured to allow near infrared light to pass; and a plurality of lenses on the RGB filter and the near infrared light filter.

Claims

1. A three-dimensional image sensor comprising:

a color pixel array on a substrate;

a distance pixel array on the substrate;

a RGB filter on the color pixel array, the RGB filter configured to allow visible light having a first wavelength to pass through;

a near infrared light filter on the distance pixel array, the near infrared light filter configured to allow near infrared light having a second wavelength to pass through; and

a stack type filter on the RGB filter and the near infrared light filter, the stack type filter configured to allow light having a third wavelength between the first wavelength and the second wavelength to pass through.

2. The image sensor of claim 1, wherein the first wavelength is about 400 nm to about 700 nm.

3. The image sensor of claim 1, wherein the third wavelength is about 400 nm to about 900 nm.

4. The image sensor of claim 1, wherein the second wavelength is no less than about 830 nm.

5. The image sensor of claim 1, wherein the RGB filter blocks infrared light.

6. The image sensor of claim 1, wherein the near infrared light filter blocks visible light.

7. The image sensor of claim 1, wherein the RGB filter and the infrared filter include a polymer or a dye that selectively blocks a light of a desired wavelength.

8. The image sensor of claim 1, wherein the stack type filter includes layers of silicon oxide and titanium oxide of varying thicknesses.

9. The image sensor of claim 1, wherein the stack type filter is a single band filter.

10. The image sensor of claim 1, wherein the stack type filter is a dual band filter.

11. The image sensor of claim 1, wherein the near infrared filter has a multi-layered structure or a single layered structure including pigment mixtures or pigment and dye mixtures.

12. The image sensor of claim 1, wherein the near infrared light filter has a multi-layered structure including at least two inorganic materials that have different reflectivities.

13. An optical system including the image sensor of claim 1, and a camera lens module on the image sensor.

14. A system including the optical system of claim 13, wherein the optical system is configured to provide image information and distance information.

15. A semiconductor device, comprising:

a color pixel array on a substrate;

a distance pixel array on the substrate;

a light-inducing member on the color pixel array and the distance pixel array;

a RGB filter on the light-inducing member and configured to allow visible light to pass;

a near infrared light filter on the light-inducing member and configured to allow near infrared light to pass; and

a plurality of lenses on the RGB filter and the near infrared light filter.

16. The semiconductor device of claim 15, wherein the RGB filter and the near infrared light filter include a pigment or a dye.

17. The semiconductor device of claim 15, wherein the near infrared light filter has a multi-layered structure including at least two inorganic materials that have different reflectivities.

18. The semiconductor device of claim 15, wherein the lenses include microlenses.

19. The semiconductor device of claim 15, wherein the light-inducing member includes a resin layer.

20. An optical system comprising:

the semiconductor device of claim 15;

a stack type filter on the semiconductor device; and

a camera lens module on the stack type filter.