SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate;
a semiconductor element formed in a main surface of the semiconductor substrate;
a first insulating film containing silicon and oxygen formed over the main surface in which the semiconductor element of the semiconductor substrate is formed;
a first opening formed in the first insulating film;
a first conductor part embedded in the first opening;
a second insulating film containing silicon and oxygen formed over the first insulating film;
a third insulating film containing silicon and carbon formed over the second insulating film;
a fourth insulating film containing silicon and oxygen formed over the third insulating film;
a wire opening formed in the second, third, and fourth insulating films and which exposes at least part of the first conductor part at the bottom thereof; and
a first wire embedded in the wire opening and electrically coupled with the first conductor part,wherein the second insulating film is a film with a higher density of the number of Si atoms than that of the first insulating film.
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Accused Products
Abstract
The reliability of a semiconductor device having an embedded wire in the lowest layer wire is improved. In a main surface of a semiconductor substrate, MISFETs are formed and over the main surface, insulating films 10, 11 are formed. In the insulating films 10, 11 a contact hole is formed and a plug is embedded therein. Over the insulating film 11 in which the plug is embedded, insulating films 14, 15, 16 are formed and an opening is formed in the insulating films 14, 15, 16 and a wire is embedded therein. The insulating film 15 is an etching stopper film when etching the insulating film 16 in order to form the opening, containing silicon and carbon. The insulating film 11 has a high hygroscopicity and the insulating film 15 has a low moisture resistance, however, by interposing the insulating film 14 therebetween and making the insulating film 14 have a higher density of the number of Si (silicon) atoms than that of the insulating film 11, an electrically weak interface is prevented from being formed.
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Citations
2 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate; a semiconductor element formed in a main surface of the semiconductor substrate; a first insulating film containing silicon and oxygen formed over the main surface in which the semiconductor element of the semiconductor substrate is formed; a first opening formed in the first insulating film; a first conductor part embedded in the first opening; a second insulating film containing silicon and oxygen formed over the first insulating film; a third insulating film containing silicon and carbon formed over the second insulating film; a fourth insulating film containing silicon and oxygen formed over the third insulating film; a wire opening formed in the second, third, and fourth insulating films and which exposes at least part of the first conductor part at the bottom thereof; and a first wire embedded in the wire opening and electrically coupled with the first conductor part, wherein the second insulating film is a film with a higher density of the number of Si atoms than that of the first insulating film.
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2-32. -32. (canceled)
Specification
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- Resources
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Current AssigneeRenesas Electronics Corporation
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Original AssigneeRenesas Electronics Corporation
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InventorsFukui, Shoichi, Kamoshima, Takao, Okada, Masakazu, FURUSAWA, Takeshi, Amishiro, Masatsugu, Suzumura, Naohito
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current257/773
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CPC Class CodesH01L 21/76832 Multiple layersH01L 21/76834 formation of thin insulatin...H01L 21/76883 Post-treatment or after-tre...
