ELECTRONIC DEVICE, METHOD OF MANUFACTURING THE SAME, DISPLAY AND SENSOR
First Claim
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1. A method of manufacturing an electronic device comprising:
- preparing a film-attached substrate comprising a substrate, and an oxide semiconductor film containing In, Ga, and Zn and a metal film containing at least one of W or Mo provided in this order on the substrate; and
wet-etching the metal film of the film-attached substrate using an etching liquid of which a main component is hydrogen peroxide under conditions such that an etching selection ratio between the metal film and the oxide semiconductor film (etching rate of the metal film/etching rate of the oxide semiconductor film) is 100 or higher.
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Abstract
A method of manufacturing an electronic device includes: preparing a film-attached substrate including a substrate, and an oxide semiconductor film containing In, Ga, and Zn and a metal film containing at least one of W or Mo provided in this order on the substrate; and wet-etching the metal film of the film-attached substrate using an etching liquid of which a main component is hydrogen peroxide under conditions such that an etching selection ratio between the metal film and the oxide semiconductor film (etching rate of the metal film/etching rate of the oxide semiconductor film) is 100 or higher.
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10 Claims
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1. A method of manufacturing an electronic device comprising:
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preparing a film-attached substrate comprising a substrate, and an oxide semiconductor film containing In, Ga, and Zn and a metal film containing at least one of W or Mo provided in this order on the substrate; and wet-etching the metal film of the film-attached substrate using an etching liquid of which a main component is hydrogen peroxide under conditions such that an etching selection ratio between the metal film and the oxide semiconductor film (etching rate of the metal film/etching rate of the oxide semiconductor film) is 100 or higher. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification