Active Protection Device for Resistive Random Access Memory (RRAM) Formation
First Claim
1. An apparatus comprising:
- a resistive random access memory (RRAM) cell connected between a first control line and a second control line; and
an active protection device (APD) connected between the second control line and an electrical ground terminal which, when activated, limits a maximum formation current magnitude applied to the RRAM cell during an RRAM formation process to prepare the RRAM cell for normal read and write operations.
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Accused Products
Abstract
Apparatus and method for providing overcurrent protection to a resistive random access memory (RRAM) cell during an RRAM formation process used to prepare the cell for normal read and write operations. In accordance with various embodiments, the RRAM cell is connected between a first control line and a second control line, and an active protection device (APD) is connected between the second control line and an electrical ground terminal. A formation current is applied through the RRAM cell, and an activation voltage is concurrently applied to the APD to maintain a maximum magnitude of the formation current below a predetermined threshold level
19 Citations
20 Claims
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1. An apparatus comprising:
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a resistive random access memory (RRAM) cell connected between a first control line and a second control line; and an active protection device (APD) connected between the second control line and an electrical ground terminal which, when activated, limits a maximum formation current magnitude applied to the RRAM cell during an RRAM formation process to prepare the RRAM cell for normal read and write operations. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method comprising:
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connecting a resistive random access memory (RRAM) cell between a first control line and a second control line, and an active protection device (APD) between the second control line and an electrical ground terminal; and applying a formation current through the RRAM cell during an RRAM formation process to prepare the RRAM cell for normal read and write operations, and concurrently applying an activation voltage to the APD to maintain a maximum magnitude of said formation current below a predetermined threshold level. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification