Optical sensor and semiconductor device

• US 20110013055A1
• Filed: 07/02/2010
• Published: 01/20/2011
• Est. Priority Date: 07/16/2009
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Oh, Hoon-Sang, Sul, Sang-Chul, Lee, Myung-Bok, Jin, Young-Gu
• Application Number:
  US12/801,938
• Publication Number:
  US 20110013055A1
• Time in Patent Office: Days
• US Class Current: 348/273
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14625 Optical elements or arrangements associated with the device
• CPC Class Codes: H01L 27/14632 Wafer-level processed structures
• CPC Class Codes: H01L 27/14645 Colour imagers

Abstract

Example embodiments are directed to a semiconductor device including a color pixel array on a substrate; a distance pixel array on the substrate; a light-inducing member on the color pixel array and the distance pixel array; an infrared light cut filter on the light-inducing member and configured to block infrared light; a near infrared light filter on the light-inducing member and configured to allow near infrared light to pass; and an RGB filter on the light-inducing member and configured to allow visible light to pass. According to example embodiments, a method of manufacturing a semiconductor device may include forming a color pixel array on a substrate; forming a distance pixel array on the substrate; forming a light-inducing member on the color pixel array and the distance pixel array; forming an infrared light cut filter on the light-inducing member; forming a near infrared light filter on the light-inducing member; forming a RGB filter on the light-inducing member; and forming a plurality of lenses on the infrared light cut filter and the near infrared light filter.

Claims

1. A semiconductor device comprising:

a color pixel array on a substrate;

a distance pixel array on the substrate;

a light-inducing member on the color pixel array and the distance pixel array;

an infrared light cut filter on the light-inducing member and configured to block infrared light;

a near infrared light filter on the light-inducing member and configured to allow near infrared light to pass; and

an RGB filter on the light-inducing member and configured to allow visible light to pass.

2. The semiconductor device of claim 1, wherein the infrared light cut filter is on the color pixel array.

3. The semiconductor device of claim 1, wherein the near infrared light filter is on the distance pixel array.

4. The semiconductor device of claim 1, wherein the RGB filter is on the infrared light cut filter.

5. The semiconductor device of claim 1, wherein the infrared light cut filter is on the RGB filter.

6. The semiconductor device of claim 1, wherein the visible light has a wavelength of about 400 nm to about 700 nm.

7. The semiconductor device of claim 1, further comprising a plurality of lenses on the infrared light cut filter and the near infrared light filter.

8. The semiconductor device of claim 1, wherein the infrared light cut filter and the near infrared light filter a silicon oxide layer and a titanium oxide layer sequentially stacked, the silicon oxide layer and the titanium oxide layer having different thicknesses.

9. The semiconductor device of claim 1, wherein the RGB filter and the near infrared light filter include a pigment or a dye.

10. An optical sensor, comprising:

a color pixel array on a substrate;

a distance pixel array on the substrate; and

a RGB filter on the color pixel array and configured to allow visible light to pass.

11. The optical sensor of claim 10, further comprising:

a near infrared light filter on the distance array and configured to allow near infrared light to pass; and

a stack type filter on the RGB filter and configured to allow visible light to pass.

12. The optical sensor of claim 10, further comprising:

an infrared light cut filter on the color pixel array and configured to allow visible light to pass; and

a long wave pass filter on the distance pixel array and configured to allow infrared light to pass.

13-22. -22. (canceled)