METHOD AND DEVICE FOR MODULATING LIGHT

• US 20110019380A1
• Filed: 10/04/2010
• Published: 01/27/2011
• Est. Priority Date: 04/08/1998
• Status: Active Grant

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: Qualcomm MEMS Technologies Incorporated (Qualcomm, Inc.)
• Inventors: Miles, Mark W.
• Granted Patent: US 8,928,967 B2
• Time in Patent Office: Days
• US Class Current: 361/783
• CPC Class Codes: G02B 26/0841 the reflecting element being moved or deformed by electrostatic means
• CPC Class Codes: G09G 2300/0809 Several active elements per pixel in active matrix panels
• CPC Class Codes: G09G 2300/0842 forming a memory circuit, e.g. a dynamic memory with one capacitor
• CPC Class Codes: G09G 2300/088 using a non-linear two-terminal element
• CPC Class Codes: G09G 3/2014 by modulation of the duration of a single pulse during which the logic level remains constant
• CPC Class Codes: G09G 3/22 using controlled light sources
• CPC Class Codes: G09G 3/3466 based on interferometric effect

Abstract

Improvements in an interferometric modulator that has a cavity defined by two walls.

Claims

1. A device, comprising:

a substrate of at least about 14 inches by 16 inches in size;

a deposited material;

an array of electromechanical devices formed on the substrate, the electromechanical devices each comprising a movable first electrode layer, a first insulator, and a second electrode; and

a plurality of transistors formed on the substrate, each of the plurality of transistors comprising a gate, a second insulator, and an electrode, and each of the plurality of transistors electrically coupled to at least one of the movable first electrode layer and a second electrode of an electromechanical device in the array,

wherein a portion of one of the movable first electrode layer, the first insulator, and the second electrode of each electromechanical device, and a portion of one of the gate, the second insulator, and the electrode of each transistor, each comprise a portion of the deposited material.

2. The device of claim 1, wherein the substrate comprises a glass or plastic material.

3. The device of claim 1, wherein the plurality of transistors comprise a plurality of thin film transistors.

4. The device of claim 3, further comprising a voltage source electrically coupled to the plurality of thin film transistors, wherein the voltage source is configured to provide voltage to at least one of the movable first electrode layer and the second electrode via the plurality of thin film transistors.

5. The device of claim 3, wherein each of the plurality of thin film transistors is configured to at least in part control the movement of the movable first electrode layer and/or second electrode with respect to the substrate.

6. The device of claim 3, wherein each of the plurality of thin film transistors is configured to drive the second electrode of an electromechanical device in the array.

7. The device of claim 1, wherein at least one of the electromechanical devices comprises at least one of tantalum, silicon, and aluminum.

8. The device of claim 1, wherein the device comprises an active matrix display.

9. The device of claim 1, wherein the deposited material comprises a metal.

10. The device of claim 1, wherein a portion of the movable first electrode layer and a portion of the gate each comprise a portion of the deposited material.

11. A method of manufacturing a drive circuit for an array of electromechanical devices that is at least about 14 inches by 16 inches in size, the method comprising:

depositing a material in a layer on a substrate;

forming an array of electromechanical devices on the substrate, each device comprising a movable first electrode layer, a first insulator, and a second electrode, wherein a portion of one of the movable first electrode layer, the first insulator, and the second electrode comprises a portion of the deposited material; and

forming a transistor on the substrate, the transistor comprising a gate, a second insulator, and an electrode, wherein a portion of one of the gate, the second insulator, and the electrode of the transistor comprises a portion of the deposited material.

12. The method of claim 11, wherein a portion of the movable first electrode layer and a portion of the gate each comprise a portion of the deposited material.

13. The method of claim 11, wherein the transistor comprises a thin film transistor.

14. The method of claim 13, further comprising connecting the thin film transistor to a voltage source.

15. The method of claim 11, wherein the substrate comprises a plastic material.

16. The method of claim 11, further comprising forming a cavity between the movable first electrode layers and the second electrodes wherein forming the cavity comprises removing a sacrificial layer.

17. The method of claim 16, wherein removing the sacrificial layer comprises etching the sacrificial layer.

18. The method of claim 11, wherein a portion of the movable first electrode layer and a portion of the gate each comprise a portion of the deposited material.

19. The device of claim 11, wherein the deposited material comprises one of molybdenum and tantalum.

20. The method of claim 11, wherein a portion of the second electrode of the electromechanical devices and a portion of the electrodes of the transistors each comprise a portion of the deposited material.