HERMETICALLY SEALING A DEVICE WITHOUT A HEAT TREATING STEP AND THE RESULTING HERMETICALLY SEALED DEVICE

• US 20110020587A1
• Filed: 09/30/2010
• Published: 01/27/2011
• Est. Priority Date: 08/18/2005
• Status: Active Grant

• Current Assignee: Bruce Gardiner Aitken, Mark Alejandro Quesada, Shari Elizabeth Koval
• Original Assignee: Bruce Gardiner Aitken, Mark Alejandro Quesada, Shari Elizabeth Koval
• Inventors: Quesada, Mark Alejandro, Koval, Shari Elizabeth, Aitken, Bruce Gardiner
• Granted Patent: US 8,304,990 B2
• Time in Patent Office: Days
• US Class Current: 428/76
• CPC Class Codes: C03C 17/3615 Coatings of the type glass/metal/other inorganic layers, at least one layer being non-metallic
• CPC Class Codes: C03C 17/3621 one layer at least containing a fluoride
• CPC Class Codes: C03C 17/3649 made of metals other than silver
• CPC Class Codes: C03C 17/3663 specially adapted for use as mirrors
• CPC Class Codes: C03C 3/12 Silica-free oxide glass compositions
• CPC Class Codes: C03C 3/247 containing fluorine and phosphorus
• CPC Class Codes: C03C 8/24 Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
• CPC Class Codes: C23C 14/086 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: Y10T 428/239 Complete cover or casing

Abstract

A method for hermetically sealing a device without performing a heat treatment step and the resulting hermetically sealed device are described herein. The method includes the steps of: (1) positioning the un-encapsulated device in a desired location with respect to a deposition device; and (2) using the deposition device to deposit a sealing material over at least a portion of the un-encapsulated device to form a hermetically sealed device without having to perform a post-deposition heat treating step. For instance, the sealing material can be a Sn²⁺-containing inorganic oxide material or a low liquidus temperature inorganic material.

Claims

1-12. -12. (canceled)

13. A device comprising:

a substrate plate;

at least one component;

a non-heat treated Sn²⁺-Containing inorganic oxide sealing material, wherein said at least one component is hermetically sealed between said non-heat treated Sn²⁺-containing inorganic oxide sealing material and said substrate plate; and

wherein said non-heat treated Sn²⁺-containing inorganic oxide sealing material has the following composition;

Sn (59-89 wt %);

P (0-13 wt %);

O (6-25 wt %); and

F (0-12 wt %).

16. The device of claim 13, wherein said non-heat treated Sn²⁺-containing inorganic oxide sealing material has a thickness of about 2 μ

m.

20. The device of claim 13, wherein said non-heat treated Sn²⁺-containing inorganic oxide sealing material has an oxygen permeance of less than 0.01% cc/m²/atm/day and a water permeance of less than 0.01 g/m²/day.

25. The device of claim 13, wherein the at least one component comprises an organic light emitting diode.

26. The device of claim 13, wherein the substrate plate is glass.

14-15. -15. (canceled)

17-19. -19. (canceled)

21-24. -24. (canceled)