BACKLIGHT PANEL EMPLOYING WHITE LIGHT EMITTING DIODE HAVING RED PHOSPHOR AND GREEN PHOSPHOR

• US 20110026242A1
• Filed: 10/14/2010
• Published: 02/03/2011
• Est. Priority Date: 03/31/2005
• Status: Active Grant

• Current Assignee: Sinotechnix LLC
• Original Assignee: Seoul Semiconductor Co., Ltd.
• Inventors: KANG, Seok Jin, RYU, Seung Ryeol
• Granted Patent: US 8,132,952 B2
• Time in Patent Office: Days
• US Class Current: 362/97.1
• CPC Class Codes: G02B 6/0051 Diffusing sheet or layer
• CPC Class Codes: G02B 6/0068 Arrangements of plural sources, e.g. multi-colour light sources
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation

Abstract

Disclosed is a backlight panel employing a white light emitting diode. The white light emitting diode includes a blue light emitting diode chip and red and green phosphors positioned over the blue light emitting diode chip. Accordingly, since the backlighting can be performed using white light with distinct red, green and blue wavelengths, the color reproducibility can be enhanced. Further, since the white light can be implemented with a single light emitting diode, the manufacturing costs and thickness of the backlight panel can also be reduced.

Claims

1. A backlight panel, comprising:

a diffusion plate comprising a top surface and a bottom surface;

a plurality of white light emitting diodes arranged below the bottom surface of the diffusion plate, the white light emitting diodes to emit light directly onto the bottom surface of the diffusion plate; and

a reflection sheet arranged below light exit surfaces of the white light emitting diodes, the reflection sheet to reflect light toward the diffusion plate,

wherein each white light emitting diode comprises a blue light emitting diode chip and a red phosphor and a green phosphor arranged on the blue light emitting diode chip.

2. The backlight panel of claim 1, further comprising a brightness enhancement film and/or a dual brightness enhancement film arranged on the top surface of the diffusion plate.

3. The backlight panel of claim 1, wherein the red phosphor comprises an alkaline earth metal sulfide-based phosphor expressed by the general formula:

A_x-aEu_aGeS_z, where A is at least one element selected from the group consisting of Ca and Sr;

z=x+2;

2≦

x≦

5; and

0.0005≦

(a/x)≦

0.02.

4. The backlight panel of claim 1, further comprising an air gap arranged between the bottom surface of the diffusion plate and the reflection sheet.

5. The backlight panel of claim 4, wherein light emitted from the white light emitting diodes is mixed together in the air gap before being emitted directly onto the bottom surface of the diffusion plate.

6. The backlight panel of claim 1, wherein the green phosphor comprises a thiogallate-based phosphor expressed by the general formula:

(A_1-x-yEu_x(M^I_0.5M^III_0.5)_y)B₂S₄, where 0<

x, y, x+y<

1;

A is at least one element selected from the group consisting of Ba, Sr and Ca;

B is at least one element selected from the group consisting of Al, Ga and In;

0.01≦

x≦

0.1;

M^I is at least one element selected from the group consisting of Li, Na and K;

M^III is at least one element selected from the group consisting of Sc, Y, Lu, Gd and La; and

0.2≦

y≦

0.8.

7. The backlight panel of claim 6, wherein the red phosphor comprises an alkaline earth metal sulfide-based phosphor expressed by the general formula:

A_x-aEu_aGeS_z, where A is at least one element selected from the group consisting of Ca and Sr;

z=x+2;

2≦

x≦

5; and

0.0005≦

(a/x)≦

0.02.

8. The backlight panel of claim 3, wherein the green phosphor comprises a thiogallate-based phosphor expressed by the general formula:

(A_1-x-yEu_x(M^I_0.5M^III_0.5)_y)B₂S₄, where 0<

x, y, x+y<

1;

A is at least one element selected from the group consisting of Ba, Sr and Ca;

B is at least one element selected from the group consisting of Al, Ga and In;

0.01≦

x≦

0.1;

M^I is at least one element selected from the group consisting of Li, Na and K;

M^III is at least one element selected from the group consisting of Sc, Y, Lu, Gd and La; and

0.2≦

y≦

0.8.