SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A semiconductor device comprising:
- a pixel portion formed over a substrate, the pixel portion including a first transistor; and
a driver circuit portion formed over the substrate, the driver circuit portion including a second transistor,wherein the first transistor includes;
a first gate electrode layer over the substrate;
a gate insulating layer over the first gate electrode layer;
a first oxide semiconductor layer over the gate insulating layer;
a first source electrode layer and a first drain electrode layer over the first oxide semiconductor layer;
a first conductive layer on and in contact with a part of the first source electrode layer or a part of the first drain electrode layer;
an first oxide insulating layer over the gate insulating layer, the first oxide semiconductor layer, the first source electrode layer, and the first drain electrode layer, the first oxide insulating layer being in contact with at least a part of the first oxide semiconductor layer between the first source electrode layer and the first drain electrode layer, anda pixel electrode layer over the first oxide insulating layer, the pixel electrode layer electrically connected to the first conductive layer,wherein the second transistor includes;
a second gate electrode layer over the substrate;
the gate insulating layer over the second gate electrode layer;
a second oxide semiconductor layer over the gate insulating layer;
a second source electrode layer and a second drain electrode layer over the second oxide semiconductor layer; and
a second oxide insulating layer over the second oxide semiconductor layer, the second source electrode layer and the second drain electrode layer, the second oxide insulating layer being in contact with the second oxide semiconductor layer,wherein each of the first gate electrode layer, the gate insulating layer, the first oxide semiconductor layer, the first source electrode layer, the first drain electrode layer, the first oxide insulating layer, and the pixel electrode layer includes light-transmitting properties,wherein a material of the second source electrode layer and the second drain electrode layer is different from a material of the first source electrode layer and the first drain electrode layer, andwherein the material of the second source electrode layer and the second drain electrode layer is a conductive material having a lower resistance than the material of the first source electrode layer and the first drain electrode layer.
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Accused Products
Abstract
One object of the present invention is to increase an aperture ratio of a semiconductor device. A pixel portion and a driver circuit are provided over one substrate. The first thin film transistor (TFT) in the pixel portion includes: a gate electrode layer over the substrate; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; source and drain electrode layers over the oxide semiconductor layer; over the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, a protective insulating layer which is in contact with part of the oxide semiconductor layer; and a pixel electrode layer over the protective insulating layer. The pixel portion has light-transmitting properties. Further, a material of source and drain electrode layers of a second TFT in the driver circuit is different from a material of those of the first TFT.
216 Citations
12 Claims
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1. A semiconductor device comprising:
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a pixel portion formed over a substrate, the pixel portion including a first transistor; and a driver circuit portion formed over the substrate, the driver circuit portion including a second transistor, wherein the first transistor includes; a first gate electrode layer over the substrate; a gate insulating layer over the first gate electrode layer; a first oxide semiconductor layer over the gate insulating layer; a first source electrode layer and a first drain electrode layer over the first oxide semiconductor layer; a first conductive layer on and in contact with a part of the first source electrode layer or a part of the first drain electrode layer; an first oxide insulating layer over the gate insulating layer, the first oxide semiconductor layer, the first source electrode layer, and the first drain electrode layer, the first oxide insulating layer being in contact with at least a part of the first oxide semiconductor layer between the first source electrode layer and the first drain electrode layer, and a pixel electrode layer over the first oxide insulating layer, the pixel electrode layer electrically connected to the first conductive layer, wherein the second transistor includes; a second gate electrode layer over the substrate; the gate insulating layer over the second gate electrode layer; a second oxide semiconductor layer over the gate insulating layer; a second source electrode layer and a second drain electrode layer over the second oxide semiconductor layer; and a second oxide insulating layer over the second oxide semiconductor layer, the second source electrode layer and the second drain electrode layer, the second oxide insulating layer being in contact with the second oxide semiconductor layer, wherein each of the first gate electrode layer, the gate insulating layer, the first oxide semiconductor layer, the first source electrode layer, the first drain electrode layer, the first oxide insulating layer, and the pixel electrode layer includes light-transmitting properties, wherein a material of the second source electrode layer and the second drain electrode layer is different from a material of the first source electrode layer and the first drain electrode layer, and wherein the material of the second source electrode layer and the second drain electrode layer is a conductive material having a lower resistance than the material of the first source electrode layer and the first drain electrode layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for manufacturing a semiconductor device, the semiconductor device including a pixel portion having a first transistor and a driver circuit having a second transistor, comprising the steps of:
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forming a first gate electrode layer of the first transistor and a second gate electrode layer of the second transistor over a substrate, by forming a first conductive film over the substrate and selectively removing the first conductive film; forming a gate insulating layer over the first gate electrode layer and the second gate electrode layer; forming an oxide semiconductor film over the gate insulating layer, forming a first oxide semiconductor layer over the first gate electrode layer and the gate insulating layer, and a second oxide semiconductor layer over the second gate electrode layer and the gate insulating layer by selectively removing the oxide semiconductor film; heating at least the first oxide semiconductor layer and the second oxide semiconductor layer in order to decrease a hydrogen concentration in the first oxide semiconductor layer and the second oxide semiconductor layer, forming an oxide conductive film and a second conductive film sequentially over the first oxide semiconductor layer and the second oxide semiconductor layer, forming a first source electrode layer and a first drain electrode layer over the first oxide semiconductor layer, and a pair of low-resistance drain regions over the second oxide semiconductor layer, and a second source electrode layer and a second drain electrode layer over the pair of low-resistance drain regions by selectively removing the oxide conductive film and the second conductive film, forming a conductive layer in contact with part of the first source electrode layer or the first drain electrode layer, forming a protective insulating layer in contact with part of the first oxide semiconductor layer and part of the second oxide semiconductor layer, and over the gate insulating layer, the first oxide semiconductor layer, the second oxide semiconductor layer, the first source electrode layer, the first drain electrode layer, the conductive layer, the second source electrode layer and the second drain electrode layer; and forming a pixel electrode layer over the protective insulating layer, wherein the first oxide semiconductor layer and the second oxide semiconductor layer are island-shaped oxide semiconductor layers. - View Dependent Claims (10)
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11. A method for manufacturing a semiconductor device, the semiconductor device including a pixel portion having a first transistor and a driver circuit having a second transistor, comprising the steps of:
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forming a first gate electrode layer of the first transistor and a second gate electrode layer of the second transistor over a substrate, by forming a first conductive film over the substrate and selectively removing the first conductive film; forming a gate insulating layer over the first gate electrode layer and the second gate electrode layer; forming an oxide semiconductor film over the gate insulating layer; heating at least the oxide semiconductor film in order to decrease a hydrogen concentration in the oxide semiconductor film; forming a first oxide semiconductor layer over the first gate electrode layer and the gate insulating layer, and second oxide semiconductor layer over the second gate electrode layer and the gate insulating layer by selectively removing the oxide semiconductor layer; forming an oxide conductive film and a second conductive film sequentially over the oxide semiconductor layer and the second oxide semiconductor layer; forming a first source electrode layer and a first drain electrode layer over the first oxide semiconductor layer, and a pair of low-resistance drain regions over the second oxide semiconductor layer, and a second source electrode layer and a second drain electrode layer over the pair of low-resistance drain regions by selectively removing the oxide conductive film and the second conductive film; forming a conductive layer in contact with part of the first source electrode layer or the first drain electrode layer; forming a protective insulating layer in contact with part of the first oxide semiconductor layer and part of the second oxide semiconductor layer, and over the gate insulating layer, the first oxide semiconductor layer, the second oxide semiconductor layer, the first source electrode layer, the first drain electrode layer, the conductive layer, the second source electrode layer and the second drain electrode layer; and forming a pixel electrode layer over the protective insulating layer, wherein the first oxide semiconductor layer and the second oxide semiconductor layer are island-shaped oxide semiconductor layers. - View Dependent Claims (12)
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Specification