ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT, EQUIPMENT AND METHOD

• US 20110058293A1
• Filed: 06/04/2008
• Published: 03/10/2011
• Est. Priority Date: 06/04/2008
• Status: Active Grant

• Current Assignee: NXP USA, Inc. (NXP Semiconductors NV)
• Original Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Inventors: Pardoen, Matthijs, Besse, Patrice
• Granted Patent: US 9,224,726 B2
• Time in Patent Office: Days
• US Class Current: 361/56
• CPC Class Codes: H01L 27/0251 for MOS devices
• CPC Class Codes: Y10T 29/49155 Manufacturing circuit on or in base

Abstract

An electrostatic discharge (ESD) protection circuit for protecting one or more devices in an electronic circuit from an ESD current which enters the electronic circuit through one or more input/output pins, the protection circuit comprising: a voltage clamp circuit connectable to the or each pin, for diverting the ESD current from the or each device; and a current sensor circuit connected between the input/output pins and the voltage clamp circuit and connected to the one or more devices, the current sensor circuit for sensing the ESD current and for switching off the or each device when the sensed current exceeds a threshold value, wherein when a current flows in the current mirror circuits above a threshold value the device is caused to switch off.

Claims

1. An electrostatic discharge (ESD) protection circuit for protecting one or more devices in an electronic circuit from an ESD current which enters the electronic circuit through one or more input/output pins, the protection circuit comprising:

a voltage clamp circuit connectable to a pin, for diverting the ESD current from the or each a device;

a current sensor circuit connected to the pin and the voltage clamp circuit and connected to the device, the current sensor circuit for sensing the ESD current and for switching off the device when the sensed current exceeds a threshold value.

2. The protection circuit of claim 1, wherein said voltage clamp circuit includes at least one diode connecting said pin to a current sink, and wherein said current sensor circuit includes a current mirror for providing a mirror current or said ESD current.

3. The protection circuit of claim 1, further comprising a device control circuit for switching off the device when the sensed current exceeds a threshold value.

4. The protection circuit of claim 1, wherein the device control circuit further comprises a gate pull down circuit connected between the device and the current sensor circuits.

5. The protection of claim 4, wherein the gate pull down circuit can also protect the device from a voltage surge when there is no ESD current.

6. The protection circuit of claim 4, wherein the current sensor circuit has a ratio which determines the relative proportions of current in the voltage clamp circuit and the gate pull down circuit.

7. The protection circuit of claim 6, wherein the ratio is associated with the threshold value.

8. The protection circuit of claim 1, wherein the threshold value is dependent upon the type of device.

9. The protection circuit of claim 1, wherein the current sensor circuit is the PNP current mirror.

10. The protection circuits of claim 1, wherein the current sensor circuit comprises a bipolar transistor and a diode.

11. The protection circuit as claimed in claim 2, wherein said diode includes first regions, a first layer of a first type of doping in between adjacent second layers of a second type of doping, opposite to said first type and wherein said current mirror includes a second region in said first layer provided with said second type of doping in between first regions of said first layer.

12. The protection circuit of claim 1, wherein the device comprises an amplifier.

13. An integrated circuit including the device, the pin and the protection circuit as claimed in claim 1.

14. Equipment including a protection circuit according to claim 1.

16. The protection circuit of claim 2, further comprising a device control circuit for switching off the device when the sensed current exceeds a threshold value.

17. The protection circuit of claim 2, wherein the device control circuit further comprises a gate pull down circuit connected between the device and the current sensor circuits.

18. The protection circuit of claim 5, wherein the current sensor circuit has a ratio which determines the relative proportions of current in the voltage clamp circuit and the gate pull down circuit.

19. The protection circuit as claimed in claim 3, wherein said diode includes first regions, a first layer of a first type of doping in between adjacent second layers of a second type of doping, opposite to said first type and wherein said current mirror includes a second region in said first layer provided with said second type of doping in between first regions of said first layer.

20. The protection circuit of claim 2, wherein the device comprises an amplifier.

15. A method of manufacturing a protection circuit for protecting one or more devices from an ESD current which enters the circuit through one or more input/output pins, the method comprising the steps of:

forming a voltage clamp circuits on a substrate connectable to a pin for diverting current from said device;

forming a current sensor circuit on the substrate such that the current sensor circuit is connected between the pin and the voltage clamp circuits and is connected to said device, the current sensor circuit for sensing the ESD current and for switching off the device when the sensed current exceeds a threshold value.