SILICON CARBIDE ON DIAMOND SUBSTRATES AND RELATED DEVICES AND METHODS
First Claim
1. A wafer precursor for semiconductor devices comprising:
- a substrate of single crystal silicon carbide that is at least two inches in diameter; and
a layer of diamond on a first face of said silicon carbide substrate;
wherein an opposite face of said silicon carbide substrate is prepared for Group III nitride epitaxial growth thereon.
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Accused Products
Abstract
A high power, wide-bandgap device is disclosed that exhibits reduced junction temperature and higher power density during operation and improved reliability at a rated power density. The device includes a diamond substrate for providing a heat sink with a thermal conductivity greater than silicon carbide, a single crystal silicon carbide layer on the diamond substrate for providing a supporting crystal lattice match for wide-bandgap material structures that is better than the crystal lattice match of diamond, and a Group III nitride heterostructure on the single crystal silicon carbide layer for providing device characteristics.
61 Citations
12 Claims
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1. A wafer precursor for semiconductor devices comprising:
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a substrate of single crystal silicon carbide that is at least two inches in diameter; and a layer of diamond on a first face of said silicon carbide substrate; wherein an opposite face of said silicon carbide substrate is prepared for Group III nitride epitaxial growth thereon. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor laser comprising:
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a diamond substrate; a single crystal silicon carbide layer on said diamond substrate; at least a first cladding layer on said silicon carbide layer; a Group III nitride active portion on said at least a first cladding layer; and at least a second cladding layer on said active portion. - View Dependent Claims (10, 11, 12)
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Specification