METHOD FOR MANUFACTURING ELECTRODE FOR POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING POWER STORAGE DEVICE

• US 20110073561A1
• Filed: 09/23/2010
• Published: 03/31/2011
• Est. Priority Date: 09/30/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Matsubara, Rie, Kuriki, Kazutaka, Momo, Junpei, Yamazaki, Shunpei
• Granted Patent: US 9,011,702 B2
• Time in Patent Office: Days
• US Class Current: 216/13
• CPC Class Codes: H01G 11/22 Electrodes
• CPC Class Codes: H01G 11/26 characterised by their structure, e.g. multi-layered, porosity or surface features
• CPC Class Codes: H01G 11/28 arranged or disposed on a current collector; Layers or phases between electrodes and current collectors, e.g. adhesives
• CPC Class Codes: H01G 11/50 specially adapted for lithium-ion capacitors, e.g. for lithium-doping or for intercalation
• CPC Class Codes: H01G 11/74 Terminals, e.g. extensions of current collectors
• CPC Class Codes: H01G 11/86 specially adapted for electrodes carbonisation or activation of carbon for the manufacture of electrodes H01G11/34
• CPC Class Codes: H01G 9/055 Etched foil electrodes
• CPC Class Codes: H01M 10/0525 Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
• CPC Class Codes: H01M 4/0438 by electrochemical processing electroless electrochemical plating C23C18/54
• CPC Class Codes: H01M 4/0445 Forming after manufacture of the electrode, e.g. first charge, cycling
• CPC Class Codes: H01M 4/13 Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
• CPC Class Codes: H01M 4/139 Processes of manufacture
• CPC Class Codes: H01M 4/661 Metal or alloys, e.g. alloy coatings H01M4/669 take precedence
• CPC Class Codes: Y02E 60/10 Energy storage using batteries
• CPC Class Codes: Y02E 60/13 Energy storage using capacitors
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

One of objects is to reduce the effect caused by the volume expansion of an active material. An embodiment is a method for manufacturing an electrode for a power storage device which includes an active material over one of surfaces of a current collector. The active material is formed by forming a conductive body functioning as the current collector; forming a mixed layer including an amorphous region and a microcrystalline region over one of surfaces of the conductive body; and etching the mixed layer selectively, so that a part of or the whole of the amorphous region is removed and the microcrystalline region is exposed. Thus, the effect caused by the volume expansion of the active material is reduced.

Claims

1. A method for manufacturing an electrode for a power storage device, the method comprising the steps of:

forming a conductive body functioning as a current collector;

forming a mixed layer including an amorphous region and a microcrystalline region over one of surfaces of the conductive body; and

etching the mixed layer selectively, so that a part of or a whole of the amorphous region is removed and the microcrystalline region is exposed, thereby, forming an active material of the electrode for the power storage device.

2. The method for manufacturing an electrode for a power storage device according to claim 1, wherein the etching is performed with use of a mixed solution as an etchant, which includes a substance oxidizing the amorphous region and a substance dissolving the oxidized amorphous region.

3. The method for manufacturing an electrode for a power storage device according to claim 1, wherein the etching is performed with use of a mixed solution as an etchant, which includes a substance oxidizing the amorphous region and a substance dissolving the oxidized amorphous region,

wherein potassium chromate is used as the substance oxidizing the amorphous region, and hydrofluoric acid is used as the substance dissolving the oxidized amorphous region.

4. The method for manufacturing an electrode for a power storage device according to claim 1, wherein the etching is performed with use of a mixed solution as an etchant, which includes a substance oxidizing the amorphous region, a substance dissolving the oxidized amorphous region, and a substance controlling a speed of oxidation of the amorphous region and a speed of dissolution of the oxidized amorphous region.

5. The method for manufacturing an electrode for a power storage device according to claim 1, wherein the etching is performed with use of a mixed solution as an etchant, which includes a substance oxidizing the amorphous region, a substance dissolving the oxidized amorphous region, and a substance controlling a speed of oxidation of the amorphous region and a speed of dissolution of the oxidized amorphous region,

wherein nitric acid is used as the substance oxidizing the amorphous region, hydrofluoric acid is used as the substance dissolving the oxidized amorphous region, and acetic acid is used as the substance controlling a speed of oxidation of the amorphous region and a speed of dissolution of the oxidized amorphous region.

6. The method for manufacturing an electrode for a power storage device according to claim 1, wherein a grain size of the microcrystal is equal to or larger than 2 nm and equal to or smaller than 50 nm.

7. The method for manufacturing an electrode for a power storage device according to claim 1, wherein the conductive body comprises aluminum, copper, nickel, or titanium.

8. The method for manufacturing an electrode for a power storage device according to claim 1, wherein the mixed layer comprises a microcrystalline silicon film, a microcrystalline silicon germanium film, or a microcrystalline germanium film.

9. The method for manufacturing an electrode for a power storage device according to claim 1, wherein the mixed layer is formed by glow discharge plasma with use of a mixture of a deposition gas, hydrogen, or a rare gas.

10. A method for manufacturing a power storage device which includes a positive electrode, a negative electrode, and an electrolyte, the method comprising the step of:

forming a conductive body functioning as a current collector;

forming a mixed layer including an amorphous region and a microcrystalline region over the one of surfaces of the conductive body; and

etching the mixed layer selectively, so that a part of or a whole of the amorphous region is removed and the microcrystalline region is exposed, thereby, forming the negative electrode of the power storage device.

11. The method for manufacturing a power storage device according to claim 10, wherein the etching is performed with use of a mixed solution as an etchant, which includes a substance oxidizing the amorphous region and a substance dissolving the oxidized amorphous region.

12. The method for manufacturing a power storage device according to claim 10, wherein the etching is performed with use of a mixed solution as an etchant, which includes a substance oxidizing the amorphous region, a substance dissolving the oxidized amorphous region, and a substance controlling a speed of oxidation of the amorphous region and a speed of dissolution of the oxidized amorphous region.

13. The method for manufacturing a power storage device according to claim 10, wherein a grain size of the microcrystal is equal to or larger than 2 nm and equal to or smaller than 50 nm.

14. The method for manufacturing a power storage device according to claim 10, wherein the conductive body comprises aluminum, copper, nickel, or titanium.

15. The method for manufacturing a power storage device according to claim 10, wherein the mixed layer comprises a microcrystalline silicon film, a microcrystalline silicon germanium film, or a microcrystalline germanium film.

16. The method for manufacturing a power storage device according to claim 10, wherein the mixed layer is formed by glow discharge plasma with use of a mixture of a deposition gas, hydrogen, or a rare gas.