METHOD FOR MANUFACTURING A BAW RESONATOR WITH A HIGH QUALITY FACTOR
First Claim
1. A method for manufacturing a bulk acoustic wave resonator, the method comprising:
- forming a Bragg mirror on a substrate, the forming including;
forming a first conductive layer on the substrate; and
forming an upper dielectric layer on the at least one first conductive layer; and
reducing a thickness of the upper dielectric layer, the reducing including achieving less than a 2% variation in the thickness across the upper dielectric layer;
forming a piezoelectric resonator on the upper dielectric layer, the piezoelectric resonator having a first electrode; and
forming a contact pad next to the piezoelectric resonator on the upper dielectric layer, the contact pad being coupled to the first electrode of the piezoelectric resonator.
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Abstract
A method for manufacturing a bulk acoustic wave resonator, each resonator including: above a substrate, a piezoelectric resonator, and next to the piezoelectric resonator, a contact pad connected to an electrode of the piezoelectric resonator; and, between the piezoelectric resonator and the substrate, a Bragg mirror including at least one conductive layer extending between the pad and the substrate and at least one upper silicon oxide layer extending between the pad and the substrate, the method including the steps of: depositing the upper silicon oxide layer; and decreasing the thickness unevenness of the upper silicon oxide layer due to the deposition method, so that this layer has a same thickness to within better than 2%, and preferably to within better than 1%, at the level of each pad.
33 Citations
19 Claims
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1. A method for manufacturing a bulk acoustic wave resonator, the method comprising:
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forming a Bragg mirror on a substrate, the forming including; forming a first conductive layer on the substrate; and forming an upper dielectric layer on the at least one first conductive layer; and reducing a thickness of the upper dielectric layer, the reducing including achieving less than a 2% variation in the thickness across the upper dielectric layer; forming a piezoelectric resonator on the upper dielectric layer, the piezoelectric resonator having a first electrode; and forming a contact pad next to the piezoelectric resonator on the upper dielectric layer, the contact pad being coupled to the first electrode of the piezoelectric resonator. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A bulk acoustic wave resonator, comprising:
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a substrate; a Bragg mirror on the substrate, the Bragg mirror having a first conductive layer on the substrate and a first dielectric layer on the first conductive layer; a piezoelectric resonator on the first dielectric layer, the piezoelectric resonator having a first electrode; a first contact pad adjacent the piezoelectric resonator on the first dielectric layer, the first contact pad coupled to the first electrode of the piezoelectric resonator; and a second conductive layer between the substrate and the first conductive layer, the second conductive layer having an electric conductivity greater than that of the first conductive layer and an acoustic impedance different from that of the first conductive layer, wherein the first conductive layer and the second conductive layer extend from a first region that is between the first contact pad and the substrate to a second region that is between the piezoelectric resonator and the substrate. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A device, comprising:
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a substrate; a Bragg mirror on the substrate, the Bragg mirror having a plurality of conductive layers and an upper dielectric layer, the upper dielectric layer having a thickness variation of less than 2%; a piezoelectric resonator on the upper dielectric layer, the piezoelectric resonator having a first electrode; and a first contact pad adjacent the piezoelectric resonator on the upper dielectric layer, the first contact pad coupled to the first electrode of the piezoelectric resonator. - View Dependent Claims (17, 18, 19)
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Specification