METHOD FOR MANUFACTURING BAW RESONATORS ON A SEMICONDUCTOR WAFER

  • US 20110080233A1
  • Filed: 10/01/2010
  • Published: 04/07/2011
  • Est. Priority Date: 10/01/2009
  • Status: Abandoned Application
First Claim
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1. A method, comprising:

  • forming a stack of layers on a semiconductor substrate, the forming including;

    forming a Bragg mirror on the substrate, the Bragg mirror including a conductive layer having a temperature coefficient of acoustic velocity (TCV) of a first sign;

    depositing a compensation layer on the Bragg mirror, the compensation layer having a TCV of a second sign that is opposite to that of the first sign; and

    decreasing thickness inequalities of the compensation layer at least until the compensation layer has a thickness variation less than 2%; and

    forming a piezoelectric resonator on the compensation layer.

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