SEMICONDUCTOR DEVICE
First Claim
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1. A semiconductor device comprising:
- a first insulating film formed above a semiconductor substrate;
a plurality of second insulating films and gate electrodes alternately laminated on the first insulating film;
a body section penetrating through the plurality of second insulating films, gate electrodes and the first insulating film, and containing an insulating region; and
a third insulating film surrounding the body section, having a charge accumulating ability formed between the body section and the gate electrode.
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Abstract
A semiconductor device has a substrate, a source region formed on the surface portion of the substrate, a first insulating layer formed on the substrate, a gate electrode formed on the first insulating layer, a second insulating layer formed on the gate electrode, a body section connected with the source region, penetrating through the first insulating layer, the gate electrode and the second insulating layer, and containing a void, a gate insulating film surrounding the body section, and formed between the body section and the gate electrode, and a drain region connected with the body section.
17 Citations
6 Claims
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1. A semiconductor device comprising:
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a first insulating film formed above a semiconductor substrate; a plurality of second insulating films and gate electrodes alternately laminated on the first insulating film; a body section penetrating through the plurality of second insulating films, gate electrodes and the first insulating film, and containing an insulating region; and a third insulating film surrounding the body section, having a charge accumulating ability formed between the body section and the gate electrode. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification