SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME

• US 20110089451A1
• Filed: 06/08/2010
• Published: 04/21/2011
• Est. Priority Date: 10/15/2009
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Song, June O., JEONG, Hwan Hee, Choi, Kwang Ki, Lee, Sang Youl
• Granted Patent: US 8,772,803 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45139 Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01039 Yttrium [Y]
• CPC Class Codes: H01L 2924/207 Diameter ranges
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/40 Materials therefor

Abstract

A semiconductor light-emitting device is provided that may include an electrode layer, a light-emitting structure including a compound semiconductor layer on the electrode layer, and an electrode on the light-emitting structure, wherein the electrode includes an ohmic contact layer that contacts the compound semiconductor layer, a first barrier layer on the ohmic contact layer, a conductive layer including copper on the first barrier layer, a second barrier layer on the conductive layer, and a bonding layer on the second barrier layer.

Claims

1. A semiconductor light-emitting device, comprising:

an electrode layer;

a light-emitting structure disposed above the electrode layer, the light-emitting structure comprising a first conductive type semiconductor layer, an active layer disposed on the first conductive type semiconductor layer, and a second conductive type semiconductor layer disposed on the active layer; and

an electrode disposed on the light-emitting structure, wherein the electrode comprises;

an ohmic contact layer that contacts a top surface of the second conductive type semiconductor layer;

a first barrier layer disposed on the ohmic contact layer;

a conductive layer comprising copper disposed on the first barrier layer;

a second barrier layer disposed on the conductive layer; and

a bonding layer disposed on the second barrier layer.

2. The semiconductor light-emitting device according to claim 1, wherein a roughness pattern is formed on a top surface of the second conductive type semiconductor layer.

3. The semiconductor light-emitting device according to claim 2, wherein the ohmic contact layer is formed to correspond to the roughness pattern.

4. The semiconductor light-emitting device according to claim 1, wherein the ohmic contact layer comprises at least one of Cr, Cr-alloy, Al, Al-alloy, Ti, Ti-alloy, Ag, Ag-alloy, Ni, or Ni-alloy.

5. The semiconductor light-emitting device according to claim 1, wherein the ohmic contact layer is formed of a multi-layer structure having a reflective metal as an upper layer.

6. The semiconductor light-emitting device according to claim 1, wherein the first barrier layer is formed of at least one of Ni, Ni-alloy, Ti, or Ti-alloy.

7. The semiconductor light-emitting device according to claim 6, wherein the first barrier layer is formed to a thickness of about 10 nm to about 500 nm.

8. The semiconductor light-emitting device according to claim 1, wherein the conductive layer is formed of Cu or Cu-alloy.

9. The semiconductor light-emitting device according to claim 8, wherein the conductive layer is formed to a thickness of about 500 nm to about 5000 nm.

10. The semiconductor light-emitting device according to claim 1, wherein the second barrier layer is formed of at least one of Ni, Ni-alloy, Ti, or Ti-alloy.

11. The semiconductor light-emitting device according to claim 1, wherein the bonding layer is a single-layer or multi-layer structure formed of Au, Al, Cu, or Cu-alloy.

12. The semiconductor light-emitting device according to claim 1, wherein the bonding layer is formed to a thickness of about 500 nm to about 3000 nm.

13. A semiconductor light-emitting device package comprising the light emitting device of claim 1.

14. The semiconductor light-emitting device package of claim 13, comprising:

a body in which the semiconductor light-emitting device is disposed;

a plurality of lead electrodes to which the semiconductor light-emitting device is electrically connected; and

a molding member configured to mold the semiconductor light-emitting device.

15. A semiconductor light-emitting device, comprising:

an electrode layer;

a light-emitting structure disposed above the electrode layer, the light-emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer, an active layer disposed on the second conductive type semiconductor layer, and a third semiconductor layer of the first conductive type disposed on the active layer; and

an electrode disposed on the light-emitting structure, wherein the electrode comprises;

an ohmic contact layer that contacts a top surface of the third semiconductor layer;

a first barrier layer disposed on the ohmic contact layer;

a conductive layer comprising copper disposed on the first barrier layer;

a second barrier layer disposed on the conductive layer; and

a bonding layer disposed on the second barrier layer.

16. The semiconductor light-emitting device according to claim 15, wherein a roughness pattern is formed on a top surface of the third semiconductor layer.

17. The semiconductor light-emitting device according to claim 16, wherein the ohmic contact layer is formed to correspond to the roughness pattern.

18. The semiconductor light-emitting device according to claim 15, wherein the ohmic contact layer comprises at least one of Cr, Cr-alloy, Al, Al-alloy, Ti, Ti-alloy, Ag, Ag-alloy, Ni, and Ni-alloy;

the first barrier layer is formed of at least one of Ni, Ni-alloy, Ti, or Ti-alloy to a thickness of about 10 nm to about 500 nm;

the conductive layer is formed of CU or CU-alloy to a thickness of about 500 nm to about 5000 nm;

the second barrier layer is formed of at least one of Ni, Ni-alloy, Ti, or Ti-alloy; and

the bonding layer is a single-layer or multi-layer structure formed of Au, Al, Cu, or Cu-alloy formed to a thickness of about 500 nm to about 3000 nm.

19. A semiconductor light-emitting device package comprising the light emitting device of claim 15.

20. The semiconductor light-emitting device package of claim 19, comprising:

a body in which the semiconductor light-emitting device is disposed;

a plurality of lead electrodes to which the semiconductor light-emitting device is electrically connected; and

a molding member configured to mold the semiconductor light-emitting device.