OPTOELECTRONIC SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• US 20110095325A1
• Filed: 01/04/2011
• Published: 04/28/2011
• Est. Priority Date: 01/18/2005
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Lu, Chih-Chiang, Hsieh, Min-Hsun, Peng, Wei-Chih, San, Shiau-Huei
• Granted Patent: US 8,860,065 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/28 containing only elements of Group II and Group VI of the Periodic Table
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An embodiment of the invention discloses an optoelectronic semiconductor device comprising a semiconductor system capable of performing a conversion between light energy and electrical energy; an interfacial layer formed on at least two surfaces of the semiconductor system; an electrical conductor; and an electrical connector electrically connecting the semiconductor system to the electric conductor.

Claims

1. An optoelectronic semiconductor device, comprising:

a unit having an upmost flat surface with a first width, and electrical connectors formed on the upmost flat surface;

an insulating material being penetrated by the electrical connectors; and

a semiconductor system, having side surfaces and an upmost surface with a second width smaller than the first width, being electrically connected to the electrical connectors exposed for uniform current spreading in the semiconductor system.

2. The optoelectronic semiconductor device of claim 1, further comprising:

a reflector formed between the insulating material and the semiconductor system.

3. The optoelectronic semiconductor device of claim 1, further comprising:

an interfacial layer covering a periphery of the semiconductor system.

4. The optoelectronic semiconductor device of claim 1, further comprising:

an electrode formed on the semiconductor system and excluded from covering the electrical connectors.

5. The optoelectronic semiconductor device of claim 1, further comprising:

an electrical conductor supporting the semiconductor system.

6. The optoelectronic semiconductor device of claim 1, further comprising:

a wavelength converting material formed on the semiconductor system.

7. The optoelectronic semiconductor device of claim 1, wherein the electrical connectors are arranged in a matrix.

8. The optoelectronic semiconductor device of claim 1, wherein the unit has a layer below the electrical connectors and is configured to laterally exceed outside an outmost boundary of the electrical connectors.

9. The optoelectronic semiconductor device of claim 1, wherein at least one of the electrical connectors is formed in a shape selected from the group consisting of rectangle, circle, ellipse, triangle, hexagon, and irregularity.

10. The optoelectronic semiconductor device of claim 1, wherein the semiconductor system comprises:

at least two semiconductor layers having different electric properties, polarities, or dopants; and

a light-emitting layer between the two semiconductor layers.

11. An optoelectronic semiconductor device, comprising:

an electrical conductor, having an upmost flat surface with a first width;

electrical connectors formed on the upmost flat surface and arranged in a matrix;

an insulating material having openings configured to expose the electrical connectors; and

a semiconductor system, having side surfaces and an upmost surface with a second width smaller than the first width, being electrically connected to the electrical connectors exposed for uniform current spreading in the semiconductor system.

12. The optoelectronic semiconductor device of claim 11, further comprising:

an electrode formed on the semiconductor system and excluded from covering the electrical connectors.

13. The optoelectronic semiconductor device of claim 11, further comprising:

a wavelength converting material formed on the semiconductor system.

14. The optoelectronic semiconductor device of claim 11, further comprising:

a reflector formed between the insulating material and the semiconductor system.

15. The optoelectronic semiconductor device of claim 11, wherein the electrical conductor is configured to laterally exceed outside an outmost boundary of the electrical connectors.

16. An optoelectronic semiconductor device, comprising:

an electrical conductor having an upmost flat surface with a first width;

electrical connectors formed on the upmost flat surface;

an insulating material having openings configured to expose the electrical connectors; and

a semiconductor system, having a light-emitting layer with a second width smaller than the first width, being electrically connected to the electrical connectors exposed for uniform current spreading in the semiconductor system.

17. The optoelectronic semiconductor device of claim 16, further comprising:

an electrode formed on the semiconductor system and excluded from covering the electrical connectors.

18. The optoelectronic semiconductor device of claim 16, further comprising:

a reflector formed between the insulating material and the semiconductor system.

19. The optoelectronic semiconductor device of claim 16, wherein the electrical connectors are arranged in a matrix.

20. The optoelectronic semiconductor device of claim 16, wherein electrical conductor is configured to laterally exceed outside an outmost boundary of the electrical connectors.