ARRAYS OF TRANSISTORS WITH BACK CONTROL GATES BURIED BENEATH THE INSULATING FILM OF A SEMICONDUCTOR-ON-INSULATOR SUBSTRATE
First Claim
1. A semiconductor device structure formed on a semiconductor-on-insulator substrate, with the semiconductor-on-insulator substrate comprising a thin film of semiconductor material separated from a base substrate by an insulating film, and the device structure comprising an array of patterns, with each pattern formed by at least one field-effect transistor with each such field-effect transistor having, in the thin film of the substrate, a source region, a drain region, a channel region which is delimited by the source and drain regions, and a front control gate region formed above the channel region;
- wherein the patterns of the array are arranged in rows, with the source and drain regions of any one row having the same dimensions and being spaced apart by front control gate regions of a fixed dimension, andwherein at least one such field-effect transistor of at least one pattern includes a back control gate region formed in the base substrate beneath the channel region, with the back gate region being biased in order to shift the threshold voltage of the transistor to simulate a modification in the channel width of the transistor.
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Abstract
This invention provides a semiconductor device structure formed on a conventional semiconductor-on-insulator (SeOI) substrate and including an array of patterns, each pattern being formed by at least one field-effect transistor, each FET transistor having, in the thin film, a source region, a drain region, a channel region, and a front control gate region formed above the channel region. The provided device further includes at least one FET transistor having a pattern including a back control gate region formed in the base substrate beneath the channel region, the back gate region being capable of being biased in order to shift the threshold voltage of the transistor to simulate a modification in the channel width of the transistor or to force the transistor to remain off or on whatever the voltage applied on its front control gate. This invention also provides methods of operating such semiconductor device structures.
86 Citations
17 Claims
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1. A semiconductor device structure formed on a semiconductor-on-insulator substrate, with the semiconductor-on-insulator substrate comprising a thin film of semiconductor material separated from a base substrate by an insulating film, and the device structure comprising an array of patterns, with each pattern formed by at least one field-effect transistor with each such field-effect transistor having, in the thin film of the substrate, a source region, a drain region, a channel region which is delimited by the source and drain regions, and a front control gate region formed above the channel region;
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wherein the patterns of the array are arranged in rows, with the source and drain regions of any one row having the same dimensions and being spaced apart by front control gate regions of a fixed dimension, and wherein at least one such field-effect transistor of at least one pattern includes a back control gate region formed in the base substrate beneath the channel region, with the back gate region being biased in order to shift the threshold voltage of the transistor to simulate a modification in the channel width of the transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification