DATA-PATH CELL ON AN SeOI SUBSTRATE WITH A BACK CONTROL GATE BENEATH THE INSULATING LAYER
First Claim
1. A data-path cell fabricated on a semiconductor-on-insulator substrate comprising a surface layer of semiconductor material separated from a bulk substrate by a buried insulating layer, the cell comprising:
- an array of field-effect transistors (FETs) having source, channel and drain regions formed in the surface semiconductor layer;
one or more back-control-gate regions positioned in the bulk substrate beneath the channel regions of one or more selected FETs; and
one or more back-gate lines conductively linking the back-control-gate regions to sources of selected bias voltages,wherein the back-control-gate regions are configured so that the bias voltages modify the conductance of channel regions overlying the back-control-gate regions.
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Abstract
This invention provides a semiconductor device structure formed on a conventional semiconductor-on-insulator (SeOI) substrate defined by a pattern defining at least one field-effect transistor having: in the thin film of the SeOI substrate, a source region, a drain region, a channel region, and a front control gate region formed above the channel region; and in the base substrate beneath the buried oxide of the SeOI substrate, a back control gate region, arranged under the channel region and configured to shift the threshold voltage of the transistor in response to bias voltages. This invention also provides patterns defining standard-cell-type circuit structures and data-path-cell type circuit structures that include arrays of the FET patterns provided by this invention. Such circuit structures also include back gate lines connecting the back gate control regions. This invention also provides methods of operating and designing such semiconductor device structures.
91 Citations
21 Claims
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1. A data-path cell fabricated on a semiconductor-on-insulator substrate comprising a surface layer of semiconductor material separated from a bulk substrate by a buried insulating layer, the cell comprising:
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an array of field-effect transistors (FETs) having source, channel and drain regions formed in the surface semiconductor layer; one or more back-control-gate regions positioned in the bulk substrate beneath the channel regions of one or more selected FETs; and one or more back-gate lines conductively linking the back-control-gate regions to sources of selected bias voltages, wherein the back-control-gate regions are configured so that the bias voltages modify the conductance of channel regions overlying the back-control-gate regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification