SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• US 20110136302A1
• Filed: 12/01/2010
• Published: 06/09/2011
• Est. Priority Date: 12/04/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: YAMAZAKI, Shunpei, SAKATA, Junichiro, OHARA, Hiroki
• Granted Patent: US 9,224,609 B2
• Time in Patent Office: Days
• US Class Current: 438/156
• CPC Class Codes: H01L 21/28176 with a treatment, e.g. annealing, after the formation of the definitive gate conductor
• CPC Class Codes: H01L 21/324 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/20 - H01L21/288 and H01L21/302 - H01L21/322 take precedence
• CPC Class Codes: H01L 29/4966 the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7831 with multiple gate structure FinFETs or MuGFETs H01L29/7855, thin film transistors H01L29/78645
• CPC Class Codes: H01L 29/78642 Vertical transistors
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

performing a first heat treatment on an oxide semiconductor film;

adding oxygen into the oxide semiconductor film subjected to the first heat treatment; and

performing a second heat treatment on the oxide semiconductor film added with the oxygen.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the step of adding oxygen is performed by an ion implantation method or an ion doping method.

3. The method for manufacturing a semiconductor device according to claim 1, wherein the first heat treatment or the second heat treatment is performed at a temperature higher than or equal to 300°

C. and lower than or equal to 850°

C.

4. A method for manufacturing a semiconductor device, comprising the steps of:

etching an oxide semiconductor film to form an island-shaped oxide semiconductor film;

performing a first heat treatment on the island-shaped oxide semiconductor film;

adding oxygen into the island-shaped oxide semiconductor film subjected to the first heat treatment; and

performing a second heat treatment on the island-shaped oxide semiconductor film added with the oxygen.

5. The method for manufacturing a semiconductor device according to claim 4, wherein the step of adding oxygen is performed by an ion implantation method or an ion doping method.

6. The method for manufacturing a semiconductor device according to claim 4, wherein the first heat treatment or the second heat treatment is performed at a temperature higher than or equal to 300°

C. and lower than or equal to 850°

C.

7. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide semiconductor film over a gate electrode with a gate insulating film provided therebetween;

etching the oxide semiconductor film to form an island-shaped oxide semiconductor film so as to overlap the gate electrode with the gate insulating film provided therebetween;

performing a first heat treatment on the island-shaped oxide semiconductor film;

adding oxygen into the island-shaped oxide semiconductor film subjected to the first heat treatment;

performing a second heat treatment on the island-shaped oxide semiconductor film added with the oxygen; and

forming a source and drain electrodes over the island-shaped oxide semiconductor film subjected to the second heat treatment.

8. The method for manufacturing a semiconductor device according to claim 7, wherein the step of adding oxygen is performed by an ion implantation method or an ion doping method.

9. The method for manufacturing a semiconductor device according to claim 7, wherein the first heat treatment or the second heat treatment is performed at a temperature higher than or equal to 300°

C. and lower than or equal to 850°

C.

10. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide semiconductor film over a gate electrode with a gate insulating film provided therebetween;

etching the oxide semiconductor film to form an island-shaped oxide semiconductor film so as to overlap the gate electrode with the gate insulating film provided therebetween;

performing a first heat treatment on the island-shaped oxide semiconductor film;

adding oxygen into the island-shaped oxide semiconductor film subjected to the first heat treatment;

performing a second heat treatment on the island-shaped oxide semiconductor film added with the oxygen;

forming a source and drain electrodes over the island-shaped oxide semiconductor film subjected to the second heat treatment; and

forming an insulating film containing oxygen so as to be in contact with the island-shaped oxide semiconductor film over the island-shaped oxide semiconductor film, and the source and drain electrodes.

11. The method for manufacturing a semiconductor device according to claim 10, wherein the step of adding oxygen is performed by an ion implantation method or an ion doping method.

12. The method for manufacturing a semiconductor device according to claim 10, wherein the first heat treatment or the second heat treatment is performed at a temperature higher than or equal to 300°

C. and lower than or equal to 850°

C.

13. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide semiconductor film over a gate electrode with a gate insulating film provided therebetween;

performing a first heat treatment on the oxide semiconductor film;

adding oxygen into the oxide semiconductor film subjected to the first heat treatment;

performing a second heat treatment on the oxide semiconductor film added with the oxygen;

etching the oxide semiconductor film subjected to the second heat treatment to form an island-shaped oxide semiconductor film so as to overlap the gate electrode with the gate insulating film provided therebetween; and

forming a source and drain electrodes over the island-shaped oxide semiconductor film.

14. The method for manufacturing a semiconductor device according to claim 13, wherein the step of adding oxygen is performed by an ion implantation method or an ion doping method.

15. The method for manufacturing a semiconductor device according to claim 13, wherein the first heat treatment or the second heat treatment is performed at a temperature higher than or equal to 300°

C. and lower than or equal to 850°

C.

16. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide semiconductor film over a gate electrode with a gate insulating film provided therebetween;

performing a first heat treatment on the oxide semiconductor film;

adding oxygen into the oxide semiconductor film subjected to the first heat treatment;

performing a second heat treatment on the oxide semiconductor film added with the oxygen;

etching the oxide semiconductor film subjected to the second heat treatment to form an island-shaped oxide semiconductor film so as to overlap the gate electrode with the gate insulating film provided therebetween;

forming a source and drain electrodes over the island-shaped oxide semiconductor film; and

forming an insulating film containing oxygen so as to be in contact with the island-shaped oxide semiconductor film over the island-shaped oxide semiconductor film, and the source and drain electrodes.

17. The method for manufacturing a semiconductor device according to claim 16, wherein the step of adding oxygen is performed by an ion implantation method or an ion doping method.

18. The method for manufacturing a semiconductor device according to claim 16, wherein the first heat treatment or the second heat treatment is performed at a temperature higher than or equal to 300°

C. and lower than or equal to 850°

C.

19. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide semiconductor film over a gate electrode with a gate insulating film provided therebetween;

etching the oxide semiconductor film to form an island-shaped oxide semiconductor film so as to overlap the gate electrode with the gate insulating film provided therebetween;

performing a first heat treatment on the island-shaped oxide semiconductor film;

adding oxygen into the island-shaped oxide semiconductor film subjected to the first heat treatment;

performing a second heat treatment on the island-shaped oxide semiconductor film added with the oxygen; and

forming a channel protective film so as to overlap the gate electrode over the island-shaped oxide semiconductor film subjected to the second heat treatment.

20. The method for manufacturing a semiconductor device according to claim 19, wherein the channel protective film is an insulating film containing oxygen.

21. The method for manufacturing a semiconductor device according to claim 19, wherein the step of adding oxygen is performed by an ion implantation method or an ion doping method.

22. The method for manufacturing a semiconductor device according to claim 19, wherein the first heat treatment or the second heat treatment is performed at a temperature higher than or equal to 300°

C. and lower than or equal to 850°

C.

23. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide semiconductor film over a gate electrode with a gate insulating film provided therebetween;

performing a first heat treatment on the oxide semiconductor film;

adding oxygen into the oxide semiconductor film subjected to the first heat treatment;

performing a second heat treatment on the oxide semiconductor film added with the oxygen;

etching the oxide semiconductor film subjected to the second heat treatment to form an island-shaped oxide semiconductor film so as to overlap the gate electrode with the gate insulating film provided therebetween; and

forming a channel protective film so as to overlap the gate electrode over the island-shaped oxide semiconductor film.

24. The method for manufacturing a semiconductor device according to claim 23, wherein the channel protective film is an insulating film containing oxygen.

25. The method for manufacturing a semiconductor device according to claim 23, wherein the step of adding oxygen is performed by an ion implantation method or an ion doping method.

26. The method for manufacturing a semiconductor device according to claim 23, wherein the first heat treatment or the second heat treatment is performed at a temperature higher than or equal to 300°

C. and lower than or equal to 850°

C.

27. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first electrode over an insulating surface;

forming an oxide semiconductor film over the first electrode;

etching the oxide semiconductor film to form an island-shaped oxide semiconductor film so as to overlap the first electrode;

performing a first heat treatment on the island-shaped oxide semiconductor film;

adding oxygen into the island-shaped oxide semiconductor film subjected to the first heat treatment;

performing a second heat treatment on the island-shaped oxide semiconductor film added with the oxygen;

forming a second electrode over the island-shaped oxide semiconductor film subjected to the second heat treatment so as to be spaced from the first electrode;

forming a gate insulating film so as to cover the first electrode, the island-shaped oxide semiconductor film, and the second electrode; and

forming a gate electrode so as to overlap an end portion of the island-shaped oxide semiconductor film with the gate insulating film provided therebetween.

28. The method for manufacturing a semiconductor device according to claim 27, wherein the step of adding oxygen is performed by an ion implantation method or an ion doping method.

29. The method for manufacturing a semiconductor device according to claim 27, wherein the first heat treatment or the second heat treatment is performed at a temperature higher than or equal to 300°

C. and lower than or equal to 850°

C.

30. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first electrode over an insulating surface;

forming an oxide semiconductor film over the first electrode;

performing a first heat treatment on the oxide semiconductor film;

adding oxygen into the oxide semiconductor film subjected to the first heat treatment;

performing a second heat treatment on the oxide semiconductor film added with the oxygen;

etching the oxide semiconductor film subjected to the second heat treatment to form an island-shaped oxide semiconductor film;

forming a second electrode over the island-shaped oxide semiconductor film so as to be spaced from the first electrode;

forming a gate insulating film so as to cover the first electrode, the island-shaped oxide semiconductor film, and the second electrode; and

forming a gate electrode so as to overlap an end portion of the island-shaped oxide semiconductor film with the gate insulating film provided therebetween.

31. The method for manufacturing a semiconductor device according to claim 30, wherein the step of adding oxygen is performed by an ion implantation method or an ion doping method.

32. The method for manufacturing a semiconductor device according to claim 30, wherein the first heat treatment or the second heat treatment is performed at a temperature higher than or equal to 300°

C. and lower than or equal to 850°

C.