SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

• US 20110156485A1
• Filed: 03/15/2010
• Published: 06/30/2011
• Est. Priority Date: 12/25/2009
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Kosai, Shohei
• Application Number:
  US12/724,190
• Publication Number:
  US 20110156485A1
• Time in Patent Office: Days
• US Class Current: 307/80
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688

Abstract

A semiconductor integrated circuit device includes a driving-voltage generating circuit including a diode-connected rectifying element and a resistor element as a voltage generating source, one end of which is connected to one end of the rectifying element and the other end of which is connected to a ground potential, wherein a voltage generated by the resistor element is output to the other end of the rectifying element as a driving voltage.

Claims

1. A semiconductor integrated circuit device comprising a driving-voltage generator comprising a diode-connected rectifying element and a resistor element as a voltage generating source, comprising a first end connected to a first end of the rectifying element and a second end connected to a grounding point, wherein

a voltage output from the resistor element is coupled to a second end of the rectifying element as a driving voltage.

2. The semiconductor integrated circuit device of claim 1, wherein a plurality of the driving-voltage generators are series-connected.

3. The semiconductor integrated circuit device of claim 2, wherein the second end of the rectifying element and a second end of the resistor element in a next stage are connected to the series-connected driving-voltage generators.

4. The semiconductor integrated circuit device of claim 3, wherein the series-connected driving-voltage generators are connected to each another via diodes.

5. The semiconductor integrated circuit device of claim 1, wherein a plurality of the driving-voltage generators are parallel-connected.

6. The semiconductor integrated circuit device of claim 5, wherein the second ends of a plurality of the rectifying elements are connected at one point to the parallel-connected driving-voltage generators.

7. The semiconductor integrated circuit device of claim 1, wherein the resistor element is a diode-connected transistor comprising a diode-connected terminal connected to the grounding point side.

8. The semiconductor integrated circuit device of claim 1, wherein at least one of the rectifying element and the resistor element is on a silicon on insulator (SOI) substrate.

9. The semiconductor integrated circuit device of claim 1, wherein a threshold voltage of the rectifying element is equal to or lower than 0 volt.

10. The semiconductor integrated circuit device of claim 2, wherein a threshold voltage of the resistor element is lower than a threshold voltage of the rectifying element by 50 millivolts or more.

11. The semiconductor integrated circuit device of claim 1, wherein a plurality of the driving-voltage generators are parallel-connected as a driving-voltage generating module, the second ends of a plurality of the rectifying elements of the driving-voltage generating module are connected at a point, and the second ends of the rectifying elements connected at the point are connected to resistor elements of driving-voltage generating modules in a next stage.

12. The semiconductor integrated circuit device of claim 1, wherein a plurality of the driving-voltage generators are series-connected as a driving-voltage generating module, first ends of a plurality of the driving-voltage generating modules are connected, and second ends of the driving-voltage generating modules are connected to a grounding point.

13. A semiconductor integrated circuit device, wherein

a first end of a diode-connected first rectifying element and a first end of a first resistor element as a voltage generating source are connected as a first driving-voltage generator and a plurality of the first driving-voltage generators are connected as a first driving-voltage generating module,

a first end of a diode-connected second rectifying element and a first end of a second resistor element as a voltage generating source are connected as a second driving-voltage generating circuit and a plurality of the second driving-voltage generators are connected as a second driving-voltage generating module, and

the first and second driving-voltage generating modules are connected either in series or in parallel.

14. The semiconductor integrated circuit device of claim 13, wherein the first and second driving-voltage generators are series-connected in the first and second driving-voltage generating modules.

15. The semiconductor integrated circuit device of claim 13, wherein the first and second driving-voltage generators are parallel-connected in the first and second driving-voltage generating modules.

16. The semiconductor integrated circuit device of claim 13, wherein

the first rectifying element and the first resistor element comprise metal-oxide semiconductor (MOS) transistors of a first conduction type, and

the second rectifying element and the second resistor element comprise MOS transistors of a second conduction type.

17. The semiconductor integrated circuit device of claim 13, wherein the rectifying element comprises a tunnel diode.

18. The semiconductor integrated circuit device of claim 13, wherein the rectifying element comprises a backward diode.

19. The semiconductor integrated circuit device of claim 13, comprising:

a power generator comprising the driving-voltage generator; and

a controller configured to supply electric power from either the power generator or an external power supply to a load.

20. The semiconductor integrated circuit device of claim 13, comprising:

a power generator comprising the driving-voltage generator; and

a controller configured to supply electric power from the power generator to an external power supply.