LIGHT EMITTING DEVICE AND MANUFACTURING METHOD FOR SAME

• US 20110168971A1
• Filed: 04/01/2009
• Published: 07/14/2011
• Est. Priority Date: 04/01/2008
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Song, June O.
• Granted Patent: US 8,791,481 B2
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a support substrate, a reflective ohmic contact layer on the support substrate, a functional complex layer including a process assisting region and ohmic contact regions divided by the process assisting region on the reflective ohmic contact layer, and a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer on each ohmic contact region.

Claims

1. A light emitting device comprising:

a support substrate;

a reflective ohmic contact layer on the support substrate;

a functional complex layer including a process assisting region and ohmic contact regions divided by the process assisting region on the reflective ohmic contact layer; and

a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer on each ohmic contact region.

2. The light emitting device of claim 1, wherein the functional complex layer includes a current blocking region provided in each ohmic contact region.

3. The light emitting device of claim 1, further comprising a diffusion barrier layer between the ohmic contact layer and the support substrate.

4. The light emitting device of claim 3, further comprising a wafer bonding layer between the diffusion barrier layer and the support substrate.

5. The light emitting device of claim 1, further comprising a passivation layer at both of a lateral surface and a portion of a top surface of the light emitting semiconductor layer.

6. The light emitting device of claim 5, wherein at least a portion of the passivation layer overlaps with the process assisting region perpendicularly to the process assisting region.

7. The light emitting device of claim 1, further comprising a first electrode layer electrically connected to light emitting semiconductor layers while overlapping with the process assisting region perpendicularly to the process assisting region.

8. The light emitting device of claim 7, wherein a portion of the first electrode layer laterally overlaps with the light emitting semiconductor layer.

9. The light emitting device of claim 1, wherein the process assisting region has a shape of a lattice cell.

10. The light emitting device of claim 1, further comprising an interfacial modification layer between the second conductive semiconductor layer and the functional complex layer, wherein the interfacial modification layer includes a supperlattice structure, one of InGaN, GaN, AlInN, AlN, InN, and AlGaN doped with first conductive impurities, one of InGaN, GaN, AlInN, AlN, InN, and AlGaN doped with second type conductive impurities, or one of group III nitride-based elements having a nitrogen-polar surface.

11. The light emitting device of claim 1, wherein the process assisting region includes one selected from the group consisting of Al₂O₃, SiN, TiO₂, ZrO₂, Si₃N₄, and SiO₂ as an electric insulating material or a material forming a schottky contact interface with respect to the second conductive semiconductor layer.

12. The light emitting device of claim 2, wherein the current blocking region includes one of an electric insulating material, an empty space filled with air, and a material forming a schottky contact interface with respect to the second conductive layer.

13. A light emitting device comprising:

a support substrate;

a reflective ohmic contact layer on the support substrate;

a functional complex layer including a process assisting region and ohmic contact regions surrounded by the process assisting region on an outer peripheral surface of the reflective ohmic contact layer; and

a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer on the ohmic contact regions.

14. The light emitting device of claim 13, further comprising a diffusion barrier layer between the support substrate and the reflective ohmic contact layer.

15. The light emitting device of claim 14, further comprising a wafer bonding layer between the diffusion barrier layer and the support substrate.

16. (canceled)