LED PACKAGE HAVING AN ARRAY OF LIGHT EMITTING CELLS COUPLED IN SERIES

• US 20110175128A1
• Filed: 03/29/2011
• Published: 07/21/2011
• Est. Priority Date: 03/11/2005
• Status: Active Grant

• Current Assignee: Seoul Semiconductor Co., Ltd.
• Original Assignee: Seoul Semiconductor Co., Ltd.
• Inventors: KIM, Hong San, LEE, Chung Hoon, KIM, Dae Won, LEE, Keon Young, CHOI, Hyuck Jung
• Granted Patent: US 8,368,190 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/642 characterized by the shape

Abstract

Disclosed is a light emitting diode (LED) package having an array of light emitting cells coupled in series. The LED package comprises a package body and an LED chip mounted on the package body. The LED chip has an array of light emitting cells coupled in series. Since the LED chip having the array of light emitting cells coupled in series is mounted on the LED package, it can be driven directly using an AC power source.

Claims

1. A light emitting diode package, comprising:

a substrate;

a nitride semiconductor light emitting chip arranged on the substrate, a first surface of the nitride semiconductor chip comprising a first-type nitride semiconductor layer, a semi-insulating layer, or an insulating nitride semiconductor layer, a second surface of the nitride semiconductor chip comprising a second-type nitride semiconductor layer, the second surface of the nitride semiconductor chip comprising a concave region, the first-type nitride semiconductor layer being exposed by the concave region;

a passivation layer arranged between the substrate and the nitride semiconductor light emitting chip;

a plurality of electrode patterns arranged between the nitride semiconductor light emitting chip and the substrate; and

a bonding pad arranged at an edge of the substrate.

2. The light emitting diode package of claim 1, wherein the electrode patterns connect the bonding pad to the nitride semiconductor light emitting chip.

3. The light emitting diode package of claim 1, wherein the substrate comprises a plurality of concave regions.

4. The light emitting diode package of claim 1, further comprising a circuit comprising an alternating current (AC) power source, wherein the light emitting diode package is connected to the circuit.

5. The light emitting diode package of claim 4, wherein the circuit comprises a bridge rectifier comprising a diode, and wherein the diode is configured to emit light.

6. The light emitting diode package of claim 1, further comprising a transparent layer, the transparent layer covering the top surface of the nitride semiconductor light emitting chip.

7. The light emitting diode package of claim 1, wherein the transparent layer comprises one of Al₂O₃, Si, SiC, ZnO, GaAs, GaP, LiAl₂O₃, BN, AlN, and GaN.

8. The light emitting diode package of claim 1, wherein the passivation layer comprises a multi-layer film comprising SiO₂, MgO, or SiN.

9. The light emitting diode package of claim 1, wherein the substrate comprises a conductive material.

10. The light emitting diode package of claim 9, wherein the conductive material comprises SiC, Si, Ge, SiGe, AlN, or metal.

11. The light emitting diode package of claim 1, further comprising a printed circuit board, the substrate being arranged on the printed circuit board.

12. The light emitting diode package of claim 11, further comprising a molding member arranged on the nitride semiconductor light emitting chip.

13. The light emitting diode package of claim 12, wherein the molding member comprises a lens type.

14. The light emitting diode package of claim 12, further comprising a reflective surface arranged under the nitride semiconductor light emitting chip.

15. The light emitting diode package of claim 1, further comprising a first molding member arranged on the nitride semiconductor light emitting chip.

16. The light emitting diode package of claim 15, further comprising a phosphor arranged between the first molding member and the nitride semiconductor light emitting chip.

17. The light emitting diode package of claim 16, further comprising a second molding member arranged on the first molding member.

18. The light emitting diode package of claim 17, further comprising a phosphor disposed in the second molding member or the first molding member.

19. The light emitting diode package of claim 17, wherein the first molding member comprises a stepped portion.

20. The light emitting diode package of claim 19, wherein the second molding member is arranged on the stepped portion.