APPARATUS FOR PURIFYING METALLURGICAL SILICON FOR SOLAR CELLS
First Claim
1. A system for forming high quality silicon material for photovoltaic devices, the system comprising:
- a crucible having an interior region, the crucible being made of a quartz material, the quartz material being capable of withstanding a temperature of at least 1400 Degrees Celsius, the crucible being configured in an upright position and having an open region to expose a melted material; and
an energy source comprising an arc heater configured above the open region and spaced by a gap between the exposed melted material and a muzzle region of the arc heater to cause formation of a determined temperature profile within a vicinity of a center region of the exposed melted material while maintaining outer regions of the melted material at a temperature below a melting point of the quartz material of the crucible.
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Accused Products
Abstract
A system for forming high quality silicon material, e.g., polysilicon. In a specific embodiment, the melted material comprises a silicon material and an impurity, e.g., phosphorous species. The system includes a crucible having an interior region. In a specific embodiment, the crucible is made of a suitable material such as a quartz material or others. The quartz material is capable of withstanding a temperature of at least 1400 Degrees Celsius for processing silicon. In a specific embodiment, the crucible is configured in an upright position and has an open region to expose a melted material. In a specific embodiment, the present system has an energy source. Such energy source may be an arc heater or other suitable heating device, including multiple heating devices, which may be the same or different. The arc heater is configured above the open region and spaced by a gap between the exposed melted material and a muzzle region of the arc heater to cause formation of a determined temperature profile within a vicinity of a center region of the exposed melted material while maintaining outer regions of the melted material at a temperature below a melting point of the quartz material of the crucible. In a specific embodiment, the system produces a melted material comprising a resulting phosphorous species of 0.1 ppm and less, which is purified silicon.
25 Citations
20 Claims
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1. A system for forming high quality silicon material for photovoltaic devices, the system comprising:
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a crucible having an interior region, the crucible being made of a quartz material, the quartz material being capable of withstanding a temperature of at least 1400 Degrees Celsius, the crucible being configured in an upright position and having an open region to expose a melted material; and an energy source comprising an arc heater configured above the open region and spaced by a gap between the exposed melted material and a muzzle region of the arc heater to cause formation of a determined temperature profile within a vicinity of a center region of the exposed melted material while maintaining outer regions of the melted material at a temperature below a melting point of the quartz material of the crucible. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 16, 17, 18, 19, 20)
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9. A system for forming high quality silicon material for solar cells, the system comprising:
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a crucible having an interior region, the crucible being made of a quartz material, the quartz material being capable of withstanding a temperature of at least 1400 Degrees Celsius, the crucible being configured in an upright position and having an open region to expose a melted material; an energy source comprising an arc heater configured above the open region and spaced by a gap between the exposed melted material and a muzzle region of the arc heater to cause formation of a determined temperature profile within a vicinity of a center region of the exposed melted material while maintaining outer regions of the melted material at a temperature below a melting point of the quartz material of the crucible; and a nozzle region configured to output argon gas to cause a dimple region within a vicinity of the center region of the melted material. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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Specification