Solid-state imaging element having image signal overflow path
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Abstract
Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a floating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse φVn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows.
41 Citations
26 Claims
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1-15. -15. (canceled)
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16. A solid-state imaging element comprising:
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unit pixels each of which has a photoelectric conversion element and a separating portion between said photoelectric conversion element and an area to which a pixel source voltage is applied; wherein an overflow path is formed at said separating portion, said overflow path being comprised of a modified semiconductor portion selectively providing a reduced barrier to charge migration relative to adjacent regions, wherein an output circuit outputs signals read into vertical signal lines in voltage mode.
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17. A solid state imaging element comprising:
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an amplifying switch having a gate electrically connected to a floating diffusion and a drain electrically connected to a pixel power source; a transfer switch having a source being said floating diffusion and a drain being a photodiode, wherein an overflow path is between said photodiode and a contact region, said contact region being electrically connected to said pixel power source. - View Dependent Claims (18, 19, 21, 22, 23, 24, 25, 26)
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20. A solid-state imaging element as claimed in claim 29, wherein said layer physically contacts said photodiode, said channel stop and said contact region.
Specification