SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD OF MANUFACTURING SAME, AND LIGHT-EMITTING DEVICE
First Claim
1. A semiconductor light-emitting element, comprising:
- a light-emitting layer having a laminated structure in which a p-type GaN film and an n-type GaN film are included;
a conductive hexagonal pyramidal base formed from ZnO and mounting with the light-emitting layer on a bottom surface thereof;
an anode joined to the bottom surface of the base at a position apart from the light-emitting layer; and
a cathode mounted on the light-emitting layer,whereinthe p-type GaN film is joined to the bottom surface of the base,the cathode is joined to an N-polar plane of the n-type GaN film, said N-polar plane being an opposite side to the p-type GaN film, andthe N-polar plane of the n-type GaN film has a fine peak-valley structure outside a portion joined to the cathode, said N-polar plane being said opposite side to the p-type GaN film.
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Accused Products
Abstract
A semiconductor light-emitting element, a method of manufacturing same, and a light-emitting device enabling an increase in light emission efficiency is provided. The semiconductor light-emitting element 1 in accordance with the present invention includes: a light-emitting layer 2 having a laminated structure in which a p-type GaN film 24 and an n-type GaN film 22 are included; a conductive hexagonal pyramidal base 3 formed from ZnO and mounting with the light-emitting layer on a bottom surface 31; an anode 5 joined to the bottom surface 31 of the base 3 at a position apart from the light-emitting layer 2; and a cathode 4 mounted on the light-emitting layer 2. In the semiconductor light-emitting element 1, the p-type GaN film 24 is joined to the bottom surface 31 of the base 3, and the cathode 4 is joined to an N-polar plane of the n-type GaN film 22, said N-polar plane of the n-type GaN film 22 being an opposite side to the p-type GaN film 24. In the semiconductor light-emitting element 1, the N-polar plane of the n-type GaN film 22 has a fine peak-valley structure 22c outside a portion joined to the cathode 4.
10 Citations
13 Claims
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1. A semiconductor light-emitting element, comprising:
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a light-emitting layer having a laminated structure in which a p-type GaN film and an n-type GaN film are included; a conductive hexagonal pyramidal base formed from ZnO and mounting with the light-emitting layer on a bottom surface thereof; an anode joined to the bottom surface of the base at a position apart from the light-emitting layer; and a cathode mounted on the light-emitting layer, wherein the p-type GaN film is joined to the bottom surface of the base, the cathode is joined to an N-polar plane of the n-type GaN film, said N-polar plane being an opposite side to the p-type GaN film, and the N-polar plane of the n-type GaN film has a fine peak-valley structure outside a portion joined to the cathode, said N-polar plane being said opposite side to the p-type GaN film. - View Dependent Claims (2, 3, 4, 5, 7, 8, 9, 10, 11, 12, 13)
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6. A method of manufacturing a semiconductor light-emitting element, in which
a light-emitting layer having a laminated structure of a p-type GaN film and an n-type GaN film is formed; -
the p-type GaN film of the light-emitting layer is joined to a bottom surface of a hexagonal pyramidal base formed from ZnO; an anode is joined to the bottom surface of the base at a position apart from the light-emitting layer; a cathode is joined to an N-polar plane of the n-type GaN film, said N-polar plane of the n-type GaN film being an opposite side to the p-type GaN film; and a fine peak-valley structure is formed on the N-polar plane of the n-type GaN film outside a portion joined to the cathode, said N-polar plane of the n-type GaN film being said opposite side to the p-type GaN film, the method comprising; forming a transfer layer on the N-polar plane of the n-type GaN film; pressing a mold die having a predetermined peak-valley pattern on one surface thereof against the transfer layer and transferring the peak-valley pattern to the transfer layer; and dry etching the transfer layer and the n-type GaN layer from surface side and etching out the transfer layer and part of the N-polar plane of the n-type GaN layer, whereby the fine peak-valley structure is formed on the N-polar plane of the n-type GaN film.
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Specification
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- Resources
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Current AssigneePanasonic Corporation (Panasonic Holdings Corporation)
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Original AssigneePanasonic Electric Works Company Limited (Panasonic Holdings Corporation)
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InventorsFukshima, Hiroshi, Murai, Akihiko
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current257/13
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CPC Class CodesH01L 33/0093 Wafer bonding; Removal of t...H01L 33/20 with a particular shape, e....H01L 33/22 Roughened surfaces, e.g. at...H01L 33/38 with a particular shapeH01L 33/405 Reflective materialsH01L 33/507 the elements being in intim...
