IN-GA-ZN-SN TYPE OXIDE SINTER AND TARGET FOR PHYSICAL FILM DEPOSITION

• US 20110260118A1
• Filed: 11/30/2007
• Published: 10/27/2011
• Est. Priority Date: 05/11/2007
• Status: Active Grant

• Current Assignee: Idemitsu Kosan Company Limited
• Original Assignee: Idemitsu Kosan Company Limited
• Inventors: Inoue, Kazuyoshi, Yano, Koki
• Granted Patent: US 8,153,031 B2
• Time in Patent Office: Days
• US Class Current: 252/512
• CPC Class Codes: C04B 2235/3284 Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
• CPC Class Codes: C04B 2235/3286 Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
• CPC Class Codes: C04B 2235/3293 Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
• CPC Class Codes: C04B 2235/5409 expressed by specific surface values
• CPC Class Codes: C04B 2235/5436 micrometer sized, i.e. from 1 to 100 micron
• CPC Class Codes: C04B 2235/5445 submicron sized, i.e. from 0,1 to 1 micron
• CPC Class Codes: C04B 2235/6585 at an oxygen percentage above that of air
• CPC Class Codes: C04B 2235/77 Density
• CPC Class Codes: C04B 2235/80 Phases present in the sintered or melt-cast ceramic products other than the main phase
• CPC Class Codes: C04B 2235/963 Surface properties, e.g. surface roughness
• CPC Class Codes: C04B 35/01 based on oxide ceramics
• CPC Class Codes: C04B 35/453 based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
• CPC Class Codes: C04B 35/457 based on tin oxides or stannates
• CPC Class Codes: C23C 14/08 Oxides C23C14/10 takes precedence
• CPC Class Codes: C23C 14/3414 Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Abstract

An oxide sintered body including an indium element (In), a gallium element (Ga), a zinc element (Zn) and a tin element (Sn), and including a compound shown by Ga₂In₆Sn₂O₁₆ or (Ga,In)₂O₃.

Claims

1. An oxide sintered body comprising an indium element (In), a gallium element (Ga), a zinc element (Zn) and a tin element (Sn), and comprising a compound shown by Ga₂In₆Sn₂O₁₆ or (Ga,In)₂O₃.

5. The oxide sintered body according to claim 1, wherein the atomic ratio of each element to the total (In+Ga+Zn+Sn) of the indium element (In), gallium element (Ga), zinc element (Sn) and tin element (Sn) satisfies the following relationships:

0.15<

In/(In+Ga+Zn+Sn)<

0.8

0.05<

Ga/(In+Ga+Zn+Sn)<

0.5

0.05<

Zn/(In+Ga+Zn+Sn)<

0.6

0.05<

Sn/(In+Ga+Zn+Sn)<

0.7

6. A target for physical film formation which comprises the oxide sintered body according to claim 1.

7. The target for physical film formation according to claim 6, which is a sputtering target having a bulk resistance of less than 20 mΩ

cm.

8. An oxide semiconductor film formed by sputtering the target according to claim 6.

9. A thin film transistor which comprises as an active layer the oxide semiconductor film according to claim 8.

2. An oxide sintered body comprising an indium element (In), a gallium element (Ga), a zinc element (Zn) and a tin element (Sn), and comprising a compound shown by Ga₂In₆Sn₂O₁₆ and a compound shown by In₂O₃.

10. A target for physical film formation which comprises the oxide sintered body according to claim 2.

13. An oxide semiconductor film formed by sputtering the target according to claim 10.

16. A thin film transistor which comprises as an active layer the oxide semiconductor film according to claim 13.

3. An oxide sintered body comprising an indium element (In), a gallium element (Ga), a zinc element (Zn) and a tin element (Sn), and comprising a compound shown by Ga₂In₆Sn₂O₁₆ and a compound shown by InGaZnO₄.

11. A target for physical film formation which comprises the oxide sintered body according to claim 3.

14. An oxide semiconductor film formed by sputtering the target according to claim 11.

17. A thin film transistor which comprises as an active layer the oxide semiconductor film according to claim 14.

4. An oxide sintered body comprising an indium element (In), a gallium element (Ga), a zinc element (Zn) and a tin element (Sn), and comprising as a main component a compound shown by Ga₂₄In₅₆Sn₂O₁₆.

12. A target for physical film formation which comprises the oxide sintered body according to claim 4.

15. An oxide semiconductor film formed by sputtering the target according to claim 12.

18. A thin film transistor which comprises as an active layer the oxide semiconductor film according to claim 15.