HIGH POWER RF SWITCH WITH ACTIVE DEVICE SIZE TAPERING

• US 20110267154A1
• Filed: 05/03/2010
• Published: 11/03/2011
• Est. Priority Date: 05/03/2010
• Status: Active Grant

• Current Assignee: Raytheon Company (Rtx Corporation)
• Original Assignee: Raytheon Company (Rtx Corporation)
• Inventors: Stanton, John R., Carroll, James M., Heston, John G.
• Granted Patent: US 8,390,395 B2
• Time in Patent Office: Days
• US Class Current: 333/103
• CPC Class Codes: H03K 17/693 Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors logic circuits H03K19/00; code converters H03M5/00, H03M7/00
• CPC Class Codes: H03K 2217/0036 Means reducing energy consumption

Abstract

In an improved T/R switch configuration of a radio transceiver, the sizes of active switches coupled in series between the receive port and the common port are tapered such that the voltage referenced to ground across the active devices of the T/R switch is more evenly distributed among the switches which increases the power handling capability of that path. According to one embodiment of the present invention, an RF switch includes a plurality of first switches coupled in series between a transmit port and a common port for transmitting an RF signal, and a plurality of second switches coupled in series between a receive port and the common port. At least two of the plurality of second switches have different sizes such that the at least two of the second switches have substantially the same nodal impedance with respect to a frequency of the RF signal and an RF ground.

Claims

1. An RF switch comprising:

a plurality of first switches coupled in series between a transmit port and a common port for transmitting an RF signal; and

a plurality of second switches coupled in series between a receive port and the common port,

wherein at least two of the plurality of second switches have different sizes such that the at least two of the second switches have substantially the same nodal impedance with respect to a frequency of the RF signal and an RF ground.

2. The RF switch of claim 1, wherein the plurality of second switches have different sizes to compensate for parasitic components of the second switches with respect to the RF signal and the RF ground.

3. The RF switch of claim 2, wherein the plurality of second switches are tapered in size from one of the second switches proximate to one of the receive port or the common port toward another one of the second switches proximate to the other one of the receive port or the common port.

4. The RF switch of claim 1, wherein the plurality of second switches is sized such that a voltage of the RF signal across the plurality of second switches is evenly divided while transmitting the RF signal.

5. The RF switch of claim 1, wherein the plurality of second switches comprises a plurality of transistors.

6. The RF switch of claim 1, wherein the plurality of second switches comprises PIN diodes.

7. The RF switch of claim 1, further comprising a plurality of third switches coupled in series between the transmit port and the RF ground, wherein at least two of the plurality of third switches have different sizes such that the at least two of the third switches have substantially the same nodal impedance with respect to the frequency of the RF signal.

8. The RF switch of claim 7, wherein the plurality of third switches have different sizes to compensate for parasitic components of the third switches with respect to the RF signal and the RF ground.

9. The RF switch of claim 8, wherein the plurality of third switches are tapered in size from one of the third switches proximate to one of the transmit port or the RF ground toward another one of the third switches proximate to the other one of the transmit port or the RF ground.

10. The RF switch of claim 7, wherein the plurality of third switches comprises transistors.

11. The RF switch of claim 7, wherein the plurality of third switches comprises PIN diodes.

12. The RF switch of claim 7, wherein the plurality of third switches is sized such that a voltage of the RF signal across the plurality of third switches is evenly divided while transmitting the RF signal.

13. The RF switch of claim 1, wherein the first switches and the second switches are discrete switches.

14. A method of manufacturing an RF switch, the method comprising:

coupling a plurality of first switches in series between a transmit port and a common port for transmitting an RF signal; and

coupling a plurality of second switches in series between a receive port and the common port,

wherein at least two of the plurality of second switches have different sizes such that the at least two of the second switches have substantially the same nodal impedance with respect to a frequency of the RF signal and an RF ground.

15. The method of claim 14, further comprising sizing the plurality of second switches differently to compensate for parasitic components of the second switches with respect to the RF signal and the RF ground.

16. The method of claim 15, further comprising tapering the plurality of second switches in size from one of the second switches proximate to one of the receive port or the common port toward another one of the second switches proximate to the other one of the receive port or the common port.

17. The method of claim 14, further comprising sizing the plurality of second switches such that a voltage of the RF signal across the plurality of second switches is evenly divided while transmitting the RF signal.

18. The method of claim 14, wherein the plurality of second switches comprises a plurality of transistors.

19. The method of claim 14, wherein the plurality of second switches comprises PIN diodes.

20. The method of claim 14, further comprising coupling a plurality of third switches in series between the transmit port and the RF ground,

wherein at least two of the plurality of third switches have different sizes such that the at least two of the third switches have substantially the same nodal impedance with respect to the frequency of the RF signal.

21. The method of claim 20, further comprising sizing the plurality of third switches differently to compensate for parasitic components of the third switches with respect to the RF signal and the RF ground.

22. The method of claim 21, further comprising tapering the plurality of third switches in size from one of the third switches proximate to one of the transmit port or the RF ground toward another one of the third switches proximate to the other one of the transmit port or the RF ground.

23. The method of claim 20, wherein the plurality of third switches comprises transistors.

24. The method of claim 20, wherein the plurality of third switches comprises PIN diodes.

25. The method of claim 20, further comprising sizing the plurality of third switches such that a voltage of the RF signal across the plurality of third switches is evenly divided while transmitting the RF signal.

26. The method of claim 14, wherein the first switches and the second switches are discrete switches.