METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming a first conductive layer functioning as a gate electrode over an insulator;
forming a first insulating layer covering the first conductive layer;
forming an oxide semiconductor layer over the first insulating layer so that part of the oxide semiconductor layer overlaps with the first conductive layer;
forming second conductive layers each electrically connected to the oxide semiconductor layer and including a source electrode and a drain electrode;
forming a second insulating layer covering the oxide semiconductor layer and the second conductive layers; and
adding a cation containing one or more elements selected from oxygen and halogen to the oxide semiconductor layer.
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Accused Products
Abstract
An object of an embodiment of the present invention is to provide a semiconductor device including a normally-off oxide semiconductor element whose characteristic variation is small in the long term. A cation containing one or more elements selected from oxygen and halogen is added to an oxide semiconductor layer, thereby suppressing elimination of oxygen, reducing hydrogen, or suppressing movement of hydrogen. Accordingly, carriers in the oxide semiconductor can be reduced and the number of the carriers can be kept constant in the long term. As a result, the semiconductor device including the normally-off oxide semiconductor element whose characteristic variation is small in the long term can be provided.
26 Citations
14 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a first conductive layer functioning as a gate electrode over an insulator; forming a first insulating layer covering the first conductive layer; forming an oxide semiconductor layer over the first insulating layer so that part of the oxide semiconductor layer overlaps with the first conductive layer; forming second conductive layers each electrically connected to the oxide semiconductor layer and including a source electrode and a drain electrode; forming a second insulating layer covering the oxide semiconductor layer and the second conductive layers; and adding a cation containing one or more elements selected from oxygen and halogen to the oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor layer over an insulator; forming first conductive layers each electrically connected to the oxide semiconductor layer and including a source electrode and a drain electrode; forming an insulating layer covering the oxide semiconductor layer and the first conductive layers; forming a second conductive layer functioning a gate electrode over the insulating layer so that part of the second conductive layer overlaps with the oxide semiconductor layer; and adding a cation containing one or more elements selected from oxygen and halogen to the oxide semiconductor layer. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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Specification