PLASMA PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

  • US 20110287631A1
  • Filed: 05/12/2011
  • Published: 11/24/2011
  • Est. Priority Date: 05/12/2010
  • Status: Active Grant
First Claim
Patent Images

1. A plasma processing apparatus comprising:

  • a processing chamber;

    a lower electrode which is provided in the processing chamber, comprises a base material which is formed of a conductive metal and to which high-frequency power is applied, and serves as a holding stage on which a substrate to be processed is held;

    an upper electrode which is provided in the processing chamber to face the lower electrode; and

    a plurality of lifter pins which freely protrude from and retreat into a top surface of the lower electrode and support the substrate to be processed over the lower electrode,wherein each of the lifter pins comprises a pin body part and a lid part which is disposed on a top portion of the pin body part and has an outer diameter greater than an outer diameter of the pin body part,wherein the lower electrode comprises through-holes for lifter pins each of which comprises a pin body receiving part, which has an inner diameter less than the outer diameter of the lid part and receives the pin body part, and a lid receiving part, which is formed in an upper portion of the pin body receiving part and receives the lid part, and in which the lifter pins are disposed,wherein in a state where the lifter pins are lowered, the lid part is received in the lid receiving part, and the upper portion of the pin body receiving part is blocked by the lid part.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×