LIGHT EMITTING DEVICE HAVING LIGHT EXTRACTION STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
First Claim
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1. A light emitting device comprising:
- a support layer;
a reflective electrode;
a semiconductor layer having a multi-layer structure, the semiconductor layer comprising a first-type semiconductor layer on the reflective electrode, a light emitting layer on the first-type semiconductor layer, and a second-type semiconductor layer on the light emitting layer, wherein a thickness of the first-type semiconductor layer is corresponding to constructive interference condition between a light emitted from the light emitting layer and a light reflected by the reflective electrode; and
a light extraction structure on the semiconductor layer.
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Abstract
A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
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15 Claims
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1. A light emitting device comprising:
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a support layer; a reflective electrode; a semiconductor layer having a multi-layer structure, the semiconductor layer comprising a first-type semiconductor layer on the reflective electrode, a light emitting layer on the first-type semiconductor layer, and a second-type semiconductor layer on the light emitting layer, wherein a thickness of the first-type semiconductor layer is corresponding to constructive interference condition between a light emitted from the light emitting layer and a light reflected by the reflective electrode; and a light extraction structure on the semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification