Electronic Devices with Yielding Substrates
First Claim
Patent Images
1. An electronic device comprising:
- a semiconductor die having first and second distinct non-coplanar contacts on a first surface thereof; and
a yielding substrate having first and second conductive traces on a first surface thereof, the first and second conductive traces being separated on the substrate by a gap therebetween,wherein the first and second contacts are adhered to and in electrical contact with, respectively, the first and second conductive traces with a pressure-activated adhesive material notwithstanding the non-coplanarity of the first and second contacts, and without electrically bridging the traces or the contacts.
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Abstract
In accordance with certain embodiments, a semiconductor die is adhered directly to a yielding substrate with a pressure-activated adhesive notwithstanding any nonplanarity of the surface of the semiconductor die or non-coplanarity of the semiconductor die contacts.
126 Citations
62 Claims
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1. An electronic device comprising:
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a semiconductor die having first and second distinct non-coplanar contacts on a first surface thereof; and a yielding substrate having first and second conductive traces on a first surface thereof, the first and second conductive traces being separated on the substrate by a gap therebetween, wherein the first and second contacts are adhered to and in electrical contact with, respectively, the first and second conductive traces with a pressure-activated adhesive material notwithstanding the non-coplanarity of the first and second contacts, and without electrically bridging the traces or the contacts. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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32. An electronic device comprising:
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a semiconductor die having first and second spaced-apart contacts on a first surface thereof; and a yielding substrate having first and second conductive traces on a first surface thereof in a bonding region, the first and second conductive traces defining a gap therebetween, wherein (i) the first and second contacts are adhered to and in electrical contact with, respectively, the first and second conductive traces with a pressure-activated adhesive material without electrically bridging the traces or the contacts, and (ii) at least in the bonding region, a height of the first and second traces above the first surface of the substrate does not exceed 10 μ
m. - View Dependent Claims (33, 34)
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35. A method of forming an electronic device, the method comprising:
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providing a yielding substrate having first and second conductive traces on a first surface thereof in a bonding region, the first and second conductive traces being separated on the substrate by a gap therebetween; and with a pressure-activated adhesive material, adhering first and second contacts of a semiconductor die to the first and second traces, respectively, by applying pressure to at least one of the yielding substrate or the semiconductor die, thereby establishing electrical connection between at least one of (i) the first contact and the first trace or (ii) the second contact and the second trace, but without electrically bridging the traces or the contacts. - View Dependent Claims (36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59)
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60. An electronic device comprising:
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a semiconductor die comprising a plurality of active semiconductor layers and a plurality of contacts, a first and a second of the active semiconductor layers collectively defining a non-planar first surface to which a first and a second of the contacts are joined; and a yielding substrate having first and second conductive traces on a first surface thereof, the first and second conductive traces being separated on the substrate by a gap therebetween, wherein the first and second contacts are adhered to and in electrical contact with, respectively, the first and second conductive traces with a pressure-activated adhesive material notwithstanding the non-planarity of the first surface of the semiconductor die, and without electrically bridging the traces or the contacts. - View Dependent Claims (61, 62)
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Specification