SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME
First Claim
1. A semiconductor device comprising a memory cell, the memory cell comprising:
- a transistor including a control gate and a storage gate;
a word line;
a data line;
a read signal line; and
a bit line,wherein the control gate is electrically connected to the word line,wherein the storage gate is electrically connected to the data line,wherein one of a source and a drain of the transistor is electrically connected to the read signal line, andwherein the other of the source and the drain of the transistor is electrically connected to the bit line.
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Accused Products
Abstract
Disclosed is a semiconductor device having a memory cell which comprises a transistor having a control gate and a storage gate. The storage gate comprises an oxide semiconductor and is able to be a conductor and an insulator depending on the potential of the storage gate and the potential of the control gate. Data is written by setting the potential of the control gate to allow the storage gate to be a conductor, supplying a potential of data to be stored to the storage gate, and setting the potential of the control gate to allow the storage gate to be an insulator. Data is read by supplying a potential for reading to a read signal line connected to one of a source and a drain of the transistor and detecting the change in potential of a bit line connected to the other of the source and the drain.
23 Citations
19 Claims
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1. A semiconductor device comprising a memory cell, the memory cell comprising:
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a transistor including a control gate and a storage gate; a word line; a data line; a read signal line; and a bit line, wherein the control gate is electrically connected to the word line, wherein the storage gate is electrically connected to the data line, wherein one of a source and a drain of the transistor is electrically connected to the read signal line, and wherein the other of the source and the drain of the transistor is electrically connected to the bit line. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device comprising a memory cell, the memory cell comprising:
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a transistor, the transistor comprising; a first gate; a first insulating layer over the first gate; a second gate over the first insulating layer; a second insulating layer over the second gate; a semiconductor layer over the second insulating layer; and a first terminal and a second terminal over the semiconductor layer; a first line electrically connected to the first gate; a second line electrically connected to the second gate; a third line electrically connected to the first terminal; and a fourth line electrically connected to the second terminal, wherein the second gate comprises an oxide semiconductor. - View Dependent Claims (7, 8, 9, 10)
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11. A semiconductor device comprising a memory cell, the memory cell comprising:
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a transistor, the transistor comprising; a semiconductor layer; a first terminal and a second terminal over the semiconductor layer; a first insulating layer over the first terminal and the second terminal; a first gate over the first insulating layer; a second insulating layer over the first gate; and a second gate over the second insulating layer; a first line electrically connected to the second gate; a second line electrically connected to the first gate; a third line electrically connected to the first terminal; and a fourth line electrically connected to the second terminal, wherein the first gate comprises an oxide semiconductor. - View Dependent Claims (12, 13, 14, 15)
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16. A method for driving a semiconductor device including a memory cell including a transistor including a control gate and a storage gate, the method comprising the steps of:
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setting a potential of the control gate to allow the storage gate to be a conductor; supplying a first potential to the storage gate; and setting the potential of the control gate to allow the storage gate to be an insulator, wherein the storage gate comprises an oxide semiconductor. - View Dependent Claims (17, 18, 19)
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Specification