SOLID-STATE IMAGING APPARATUS AND IMAGING SYSTEM

• US 20120008029A1
• Filed: 06/14/2011
• Published: 01/12/2012
• Est. Priority Date: 07/07/2010
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Matsuda, Takashi, Kikuchi, Shin, Koizumi, Toru
• Granted Patent: US 9,007,501 B2
• Time in Patent Office: Days
• US Class Current: 348/300
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14623 Optical shielding
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 27/14663 Indirect radiation imagers, e.g. using luminescent members
• CPC Class Codes: H04N 25/41 Extracting pixel data from a plurality of image sensors simultaneously picking up an image, e.g. for increasing the field of view by combining the outputs of a plurality of sensors
• CPC Class Codes: H04N 25/75 Circuitry for providing, modifying or processing image signals from the pixel array
• CPC Class Codes: H04N 25/77 Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
• CPC Class Codes: H04N 5/32 Transforming X-rays cameras or camera modules for generating image signals from X-rays H04N23/30; circuitry of SSIS for transforming X-rays into image signals H04N25/30

Abstract

A solid-state imaging apparatus includes a pixel array in which a plurality of pixels are arranged, wherein the pixel array has a region formed from one of an electrical conductor and a semiconductor to which a fixed electric potential is supplied, each pixel includes a photoelectric converter, a charge-voltage converter which converts charges generated by the photoelectric converter into a voltage, and an amplification unit which amplifies a signal generated by the charge-voltage converter by a positive gain and outputs the amplified signal to an output line, and the output line comprising a shielding portion arranged to shield at least part of the charge-voltage converter with respect to the region.

Claims

1. A solid-state imaging apparatus including a pixel array in which a plurality of pixels are arranged,

the pixel array comprising a region formed from one of an electrical conductor and a semiconductor to which a fixed electric potential is supplied,

each pixel comprising

a photoelectric converter,

a charge-voltage converter which converts charges generated by the photoelectric converter into a voltage, and

an amplification unit which amplifies a signal generated by the charge-voltage converter by a positive gain and outputs the amplified signal to an output line, and

the output line comprising a shielding portion arranged to shield at least part of the charge-voltage converter with respect to the region.

2. The apparatus according to claim 1, wherein

the photoelectric converter is formed in a semiconductor substrate,

the region comprises an impurity region formed in the semiconductor substrate,

the output line comprises a first conductive pattern arranged to form at least part of the shielding portion, and

the charge-voltage converter comprises a second conductive pattern arranged above the first conductive pattern along the first conductive pattern.

3. The apparatus according to claim 1, wherein

the output line comprises a first conductive pattern arranged in a first wiring layer to form at least part of the shielding portion, and

the charge-voltage converter comprises a second conductive pattern arranged in a second wiring layer above the first wiring layer along the first conductive pattern,

the solid-state imaging apparatus further comprises a third conductive pattern arranged in a third wiring layer above the second wiring layer and having an opening portion at part of a region where the photoelectric converter exists when viewed from an upper side, and

the second conductive pattern is arranged in the opening portion when viewed from the upper side.

4. The apparatus according to claim 1, wherein

the photoelectric converter is formed in a semiconductor substrate,

each pixel further comprises a transfer unit which transfers the charges from the photoelectric converter to the charge-voltage converter,

the charge-voltage converter comprises an impurity region arranged in the semiconductor substrate, a first conductive pattern arranged in a first wiring layer, and a contact plug which connects the impurity region and the first conductive pattern,

the output line comprises a second conductive pattern arranged in the first wiring layer and including a portion parallel to at least part of the first conductive pattern, a third conductive pattern arranged in a second wiring layer above the first wiring layer, and a via plug which connects the second conductive pattern and the third conductive pattern,

the electrical conductor comprises a fourth conductive pattern arranged in a third wiring layer above the second wiring layer, and

the third conductive pattern forms at least part of the shielding portion.

5. The apparatus according to claim 1, further comprising a scintillator which converts radiation into visible light,

wherein the pixel array is arranged to photoelectrically convert the visible light, and

the apparatus is formed as a radiation imaging apparatus.

11. An imaging system comprising:

a solid-state imaging apparatus defined in claim 1; and

a processor which processes a signal output from the solid-state imaging apparatus.

6. A solid-state imaging apparatus including a pixel array in which a plurality of pixels are arranged,

the pixel array comprising a region formed from one of an electrical conductor and a semiconductor to which a fixed electric potential is supplied;

and

each pixel comprising

a photoelectric converter,

a charge-voltage converter which converts charges generated by the photoelectric converter into a voltage, and

an amplification unit which amplifies a signal generated by the charge-voltage converter by a positive gain and outputs the amplified signal to an output node,

wherein part of a first conductive pattern that forms the output node is arranged between at least part of the region and at least part of the charge-voltage converter.

7. The apparatus according to claim 6, wherein

the photoelectric converter is arranged in a semiconductor substrate,

the region comprises an impurity region arranged in the semiconductor substrate, and

the charge-voltage converter comprises a second conductive pattern arranged above the first conductive pattern along the first conductive pattern.

8. The apparatus according to claim 6, wherein

the first conductive pattern is arranged in a first wiring layer,

the charge-voltage converter comprises a second conductive pattern arranged in a second wiring layer above the first wiring layer along the first conductive pattern,

the solid-state imaging apparatus further comprises a third conductive pattern arranged in a third wiring layer above the second wiring layer and having an opening portion at a portion corresponding to the photoelectric converter when viewed from an upper side, and

the second conductive pattern is arranged in the opening portion when viewed from the upper side.

9. The apparatus according to claim 6, wherein

the photoelectric converter is arranged in a semiconductor substrate,

each pixel further comprises a transfer unit which transfers the charges from the photoelectric converter to the charge-voltage converter,

the charge-voltage converter comprises an impurity region arranged in the semiconductor substrate, a second conductive pattern arranged in a first wiring layer, and a contact plug which connects the impurity region and the second conductive pattern,

the first conductive pattern comprises a third conductive pattern arranged in the first wiring layer and including a portion parallel to at least part of the second conductive pattern, a fourth conductive pattern arranged in a second wiring layer above the first wiring layer, and a via plug which connects the third conductive pattern and the fourth conductive pattern,

the electrical conductor comprises a fifth conductive pattern arranged in a third wiring layer above the second wiring layer, and

the fourth conductive pattern is arranged between at least part of the second conductive pattern and at least part of the fifth conductive pattern.

10. The apparatus according to claim 6, further comprising a scintillator which converts radiation into visible light,

wherein the pixel array is arranged to photoelectrically convert the visible light, and

the apparatus is formed as a radiation imaging apparatus.

12. An imaging system comprising:

a solid-state imaging apparatus defined in claim 6; and

a processor which processes a signal output from the solid-state imaging apparatus.