GAS BARRIER FILM, ELECTRONIC DEVICE INCLUDING THE SAME, GAS BARRIER BAG, AND METHOD FOR PRODUCING GAS BARRIER FILM

• US 20120009368A1
• Filed: 03/23/2010
• Published: 01/12/2012
• Est. Priority Date: 03/30/2009
• Status: Active Grant

• Current Assignee: Air Water Incorporated, Material Design Factory Co., Ltd.
• Original Assignee: Air Water Incorporated, Material Design Factory Co., Ltd.
• Inventors: Nakayama, Hiroshi
• Granted Patent: US 8,871,350 B2
• Time in Patent Office: Days
• US Class Current: 428/35.4
• CPC Class Codes: C23C 16/30 Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• CPC Class Codes: C23C 16/36 Carbonitrides
• CPC Class Codes: C23C 16/44 characterised by the method of coating C23C16/04 takes precedence
• CPC Class Codes: H01L 31/02167 for solar cells
• CPC Class Codes: H01L 31/0392 including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate textured substrates H01L31/02366
• CPC Class Codes: H01L 31/048 Encapsulation of modules
• CPC Class Codes: H10K 50/84 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy
• CPC Class Codes: Y10T 428/1341 Contains vapor or gas barrier, polymer derived from vinyl chloride or vinylidene chloride, or polymer containing a vinyl alcohol unit
• CPC Class Codes: Y10T 428/1352 Polymer or resin containing [i.e., natural or synthetic]

Abstract

A gas barrier film in which a gas barrier layer deposited by catalyst CVD in contact with each of both main surfaces of a plastic film is an SiCNFH layer satisfying conditions of 0.01<I(SiH)/I(SiN)<0.05, 0.00<I(CH)/I(SiN)<0.07, 0.04<I(NH)/I(SiN)<0.08, and 0.05<I(CF)/I(SiN)<0.3; an SiOCNH layer satisfying conditions of 0.1<I(SiH)/I(NH)<0.9, 0.0<I(CH)/I(NH)<0.3, 8<I(SiN)/I(NH)<20, and 2<I(SiO₂)/I(NH)<8; or an SiCNH layer satisfying conditions of 0.01<I(SiH)/I(SiN)<0.05, 0.00<I(CH)/I(SiN)<0.07 and 0.04<I(NH)/I(SiN)<0.08. Here, the “I” represents peak intensity of Fourier transform infrared spectroscopy related to an atomic bond shown in the parentheses after the “I”.

Claims

1. A gas barrier film comprising a gas barrier layer in contact with each of both main surfaces of a plastic film,

wherein the gas barrier layer is an SiCNFH layer, an SiOCNH layer or an SiCNH layer deposited by Cat-CVD,

the SiCNFH layer satisfying conditions of

0.01<

I(SiH)/I(SiN)<

0.05,

0.00<

I(CH)/I(SiN)<

0.07,

0.04<

I(NH)/I(SiN)<

0.08, and

0.05<

I(CF)/I(SiN)<

0.3;

the SiOCNH layer satisfying conditions of

0.1<

I(SiH)/I(NH)<

0.9,

0.0<

I(CH)/I(NH)<

0.3,

8<

I(SiN)/I(NH)<

20, and

2<

I(SiO₂)/I(NH)<

8; and

the SiCNH layer satisfying conditions of

0.01<

I(SiH)/I(SiN)<

0.05,

0.00<

I(CH)/I(SiN)<

0.07 and

0.04<

I(NH)/I(SiN)<

0.08;

where the “

I”

represents peak intensity of Fourier transform infrared spectroscopy related to the atomic bond shown in the parentheses after the “

I”

.

2. The gas barrier film according to claim 1, wherein

the SiCNFH layer satisfies conditions of

0.01< I(SiH)/I(SiN)<

0.03,

0.00<

I(CH)/I(SiN)<

0.02,

0.05<

I(NH)/I(SiN)<

0.08, and

0.05<

I(CF)/I(SiN)<

0.25;

the SiOCNH layer satisfies conditions of

0.1<

I(SiH)/I(NH)<

0.5,

0.0<

I(CH)/I(NH)<

0.2,

10<

I(SiN)/I(NH)<

20, and

2<

I(SiO₂)/I(NH)<

5; and

the SiCNH layer satisfies conditions of

0.01<

I(SiH)/I(SiN)<

0.03,

0.00<

I(CH)/I(SiN)<

0.02 and

0.05<

I(NH)/I(SiN)<

0.08.

3. The gas barrier film according to claim 1, wherein an additional barrier layer of the SiCNFH layer, SiOCNH layer or SiCNH layer is stacked on the barrier layer in contact with the plastic film, and the additional barrier layer is of a kind different from the barrier layer in contact with the plastic film.

4. The gas barrier film according to claim 1, wherein the plastic film is a heat- resistive plastic film having a glass transition temperature of 120°

C. or more, a melting point of 200°

C. or more, or a liquid-crystal transition temperature of 200°

C. or more.

5. The gas barrier film according to claim 1, wherein the plastic film has been subjected to a surface-planarization process.

6. The gas barrier film according to claim 1 additionally comprising an electric-conductive layer over at least one of both main surfaces of the gas barrier film.

7. An electronic device comprising the gas barrier film of claim 1 as a protective layer.

8. The electronic device according to claim 7 is one of a touch panel, an organic EL device, an inorganic EL device, a solar cell, and electronic paper.

9. A gas barrier bag formed with the gas barrier film of claim 1.

10. A method for producing the gas barrier film of claim 1, wherein the gas barrier film is formed by Cat-CVD using source materials selected from an organic silane compound, an organic amino-silicon compound, ammonia, fluorocarbon, oxygen, and hydrogen.