PROTECTED RESONATOR

• US 20120013224A1
• Filed: 09/27/2011
• Published: 01/19/2012
• Est. Priority Date: 01/26/2009
• Status: Active Grant

• Current Assignee: Resonance Semiconductor Corp.
• Original Assignee: Cymatics Laboratories Corp.
• Inventors: Sinha, Rajarishi, Carley, L. Richard, Chomas, Louis Caley, Safar, Hugo
• Granted Patent: US 8,222,795 B2
• Time in Patent Office: Days
• US Class Current: 310/344
• CPC Class Codes: H03H 9/02086 Means for compensation or elimination of undesirable effects
• CPC Class Codes: H03H 9/02102 of temperature influence cutting angles H03H9/02015
• CPC Class Codes: H03H 9/02133 of stress
• CPC Class Codes: H03H 9/02149 of ageing changes of characteristics, e.g. electro-acousto-migration
• CPC Class Codes: H03H 9/0557 the other elements being buried in the substrate
• CPC Class Codes: H03H 9/1007 for bulk acoustic wave [BAW] devices
• CPC Class Codes: H03H 9/105 the enclosure being defined by a cover cap mounted on an element forming part of the BAW device
• CPC Class Codes: H03H 9/175 Acoustic mirrors
• CPC Class Codes: H10N 30/883 Further insulation means against electrical, physical or chemical damage, e.g. protective coatings

Abstract

A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer.

Claims

1. A resonator comprising:

a substrate;

a piezoelectric layer formed over said substrate a least a portion of the piezoelectric layer being disposed between two electrodes;

a temperature compensating layer surrounding the piezoelectric layer and electrodes;

wherein the piezoelectric material is supported on the substrate by an electrically conductive material structure that electrically interconnects one of contact pads or semiconductor devices on the substrate with the top electrode;

a cap layer formed over, but not in contact with, the piezoelectric material surrounded by the temperature compensating layer.

2. The resonator of claim 1 wherein the cap layer is constructed as a Bragg layer.

3. The resonator of claim 1 wherein the resonator, in operation exhibits a shift in the impedance response of the resonator as a function of frequency at a rate of about 5 ppm per year or less.

4. The resonator of claim 1 wherein the cap layer is spaced from the electrically conductive layer, wherein the resonator further comprises an electrically conductive layer disposed either on the substrate between the substrate and piezoelectric layer or on the underside of the cap layer and disposed between the cap layer and the piezoelectric material.

5. The resonator of claim 4 wherein the electrically conductive layer is formed on the underside of the cap layer and is electrically coupled to the top electrode in a manner selected from the group consisting of capacitive coupling and inductive coupling.

6. The resonator of claim 4 wherein the electrically conductive layer is formed over the substrate and is electrically coupled to the bottom electrode in a manner selected from the group consisting of capacitive coupling and inductive coupling.

7. A resonator comprising:

a substrate;

a piezoelectric layer formed over said substrate a least a portion of the piezoelectric layer being disposed between two electrodes;

a temperature compensating layer substantially surrounding the piezoelectric layer and electrodes;

wherein the top electrode is electrically interconnected to one of contact pads or semiconductor devices on the substrate through a window in the temperature compensation material and wherein the piezoelectric material is supported on the substrate by a post that is less than completely laterally coextensive with the piezoelectric layer;

a cap layer formed over, but not in contact with, the piezoelectric material surrounded by the temperature compensating layer.

8. The resonator of claim 7 wherein the resonator, in operation, exhibits a shift in the impedance response of the resonator as a function of frequency at a rate of about 5 ppm per year or less.

9. The resonator of claim 8 wherein the cap layer is constructed as a Bragg layer.

10. A resonator comprising:

a substrate;

a piezoelectric layer formed over said substrate a least a portion of the piezoelectric layer being disposed between two electrodes;

a protective element formed over the piezoelectric layer and its associated electrodes wherein the resonator, in operation, has both a parallel resonance and series resonance and wherein the protective element is configured such that the resonator, in operation, exhibits a shift in the impedance response of the resonator as a function of frequency at a rate of about 5 ppm per year or less.

11. The resonator of claim 10 wherein the protective element is a collar of piezoelectric material that surrounds an active interior region of the piezoelectric material.

12. The resonator of claim 10 further comprising a Bragg structure formed either above the piezoelectric layer, below the piezoelectric layer or both above and below the piezoelectric layer wherein the Bragg structure has a lateral extent that is at least coextensive with the piezoelectric layer.

13. The resonator of claim 10 further comprising a dielectric spacer that defines the lateral extent of the active interior region of the piezoelectric material.

14. The resonator of claim 10 further comprising a temperature compensating layer surrounding the piezoelectric layer and electrodes;

wherein the piezoelectric material is supported on the substrate by an electrically conductive material structure that electrically interconnects one of contact pads or semiconductor devices on the substrate with the top electrode.

15. The resonator of claim 10 further comprising a cap layer formed over, but not in contact with, the piezoelectric material surrounded by the temperature compensating layer.

16. The resonator of claim 10 further comprising a cap layer formed over the piezoelectric layer, wherein the piezoelectric layer is separated from the substrate and supported on the substrate by the cap layer.

17. The resonator of claim 10 wherein the cap layer is constructed as a Bragg layer.

18. The resonator of claim 10 further comprising a layer of low acoustic impedance material formed thereover.

19. The resonator of claim 18 wherein a passivation layer is interposed between the resonator and the layer of low acoustic impedance material.

20. The resonator of claim 10 further comprising a temperature compensating layer formed over the piezoelectric layer adjacent to the electrode formed over the piezoelectric layer.

21. The resonator of claim 10 wherein the resonator, in operation, has both a parallel resonance and a series resonance and wherein at least one of the parallel resonance and the series resonance changes over a period of time at a rate of about 5 ppm per year or less.