• US 20120032172A1
  • Filed: 07/29/2011
  • Published: 02/09/2012
  • Est. Priority Date: 08/06/2010
  • Status: Abandoned Application
First Claim
Patent Images

1. A semiconductor device comprising:

  • an insulating layer over a substrate;

    an oxide semiconductor layer over the substrate;

    a source electrode and a drain electrode whose end portion has a taper angle and whose upper end portion has a curved surface, the source electrode and the drain electrode being electrically connected to the oxide semiconductor layer;

    a gate insulating layer being in contact with a part of the oxide semiconductor layer and covering the oxide semiconductor layer, the source electrode, and the drain electrode; and

    a gate electrode overlapping with the oxide semiconductor layer and being over the gate insulating layer.

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