Semiconductor Die and Method of Forming FO-WLCSP Vertical Interconnect Using TSV and TMV

  • US 20120032340A1
  • Filed: 08/06/2010
  • Published: 02/09/2012
  • Est. Priority Date: 08/06/2010
  • Status: Active Grant
First Claim
Patent Images

1. A method of manufacturing a semiconductor device, comprising:

  • providing a semiconductor wafer having a plurality of conductive through silicon vias (TSV) formed through the semiconductor wafer;

    mounting the semiconductor wafer with the TSV to a carrier;

    cutting channels through the semiconductor wafer to provide a plurality of TSV wafer segments;

    mounting a semiconductor die to each TSV wafer segment;

    depositing an encapsulant over the semiconductor die and TSV wafer segment;

    forming a plurality of vias through the encapsulant over the conductive TSV and contact pads of the semiconductor die;

    depositing an electrically conductive material in the vias to form conductive through mold vias (TMV);

    forming a conductive layer over the encapsulant electrically connected to the conductive TMV;

    forming an insulating layer over the encapsulant and conductive layer; and

    singulating the semiconductor device through the channels.

View all claims

    Thank you for your feedback