COMMON OPTICAL ELEMENT FOR AN ARRAY OF PHOSPHOR CONVERTED LIGHT EMITTING DEVICES

• US 20120043564A1
• Filed: 11/03/2011
• Published: 02/23/2012
• Est. Priority Date: 11/12/2004
• Status: Active Grant

• Current Assignee: Lumileds LLC (Apollo Global Management, Inc.)
• Original Assignee: Philips Lumileds Lighting Company LLC (Apollo Global Management, Inc.), Koninklijke Philips Electronics N.V. (Koninklijke Philips N.V.)
• Inventors: CAMRAS, MICHAEL D., STERANKA, FRANK M., KRAMES, MICHAEL R., Alferink, Robertus G., IMLER, WILLIAM R., WALL, FRANKLIN J. Jr., TICHA, HELENA, TICHY, LADISLAV
• Granted Patent: US 8,748,912 B2
• Time in Patent Office: Days
• US Class Current: 257/88
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/58 Optical field-shaping elements
• CPC Class Codes: H05B 45/20 Controlling the colour of the light

Abstract

A device is provided with at least one light emitting device (LED) die mounted on a submount with an optical element subsequently thermally bonded to the LED die. The LED die is electrically coupled to the submount through contact bumps that have a higher temperature melting point than is used to thermally bond the optical element to the LED die. In one implementation, a single optical element is bonded to a plurality of LED dice that are mounted to the submount and the submount and the optical element have approximately the same coefficients of thermal expansion. Alternatively, a number of optical elements may be used. The optical element or LED die may be covered with a coating of wavelength converting material. In one implementation, the device is tested to determine the wavelengths produced and additional layers of the wavelength converting material are added until the desired wavelengths are produced.

Claims

1-29. -29. (canceled)

30. An apparatus comprising:

a submount;

a plurality of light emitting device dice mounted to the submount; and

a single optical element bonded to a surface of each of the plurality of light emitting device dice.

31. The apparatus of claim 30, further comprising contact elements that are on at least one of the top surface of the submount and the bottom surfaces of the light emitting device dice, the light emitting device dice being electrically coupled to the submount through the contact elements.

32. The apparatus of claim 31, wherein the contact elements are formed from a material that includes at least one of Au and AuSn.

33. The apparatus of claim 30, further comprising a coating of wavelength converting material over the optical element.

34. The apparatus of claim 30, further comprising a layer of wavelength converting material between the optical element and at least a plurality of the light emitting device dice.

35. The apparatus of claim 30, wherein the submount and the optical element are formed from materials with approximately the same coefficient of thermal expansion.

36. The apparatus of claim 35, wherein the light emitting device dice have coefficients of thermal expansion that are approximately the same as the coefficient of thermal expansion of the submount.

37. The apparatus of claim 30, further comprising a layer of a bonding material between the optical element and each of the light emitting device dice, the bonding layer comprising an inorganic material.

38. The apparatus of claim 30, wherein each of the light emitting device dice comprise a stack of semiconductor layers, at least one of which is an active region that emits lights, and a first contact and a second contact electrically coupled to apply a voltage across the active region;

the first contact and the second contact disposed on a same side of the stack.

39-43. -43. (canceled)

44. A device comprising:

a semiconductor light emitting device comprising a stack of semiconductor layers

including an active region;

an optical element bonded to the semiconductor light emitting device;

a bonding layer disposed between the optical element and the semiconductor light emitting device, wherein the bonding layer comprises an oxide of tellurium; and

a submount electrically connected to the light emitting device.

45. The device of claim 44, wherein the submount comprises a ceramic.

46. The device of claim 44, wherein the submount comprises a material selected from the group of AIN, alumina, and Si.

47. The device of claim 44, further comprising contact elements that electrically connect the submount to the light emitting device, wherein the contact elements are formed from a material that includes at least one of Au and AuSn.

48. The device of claim 44, wherein the optical element comprises a material selected from the group of sapphire, Si C, aluminum oxynitride, zirconia oxide, GaN, AIN, spinel, GaP, ZnS, an oxide of tellurium, an oxide of lead, an oxide of tungsten, and transparent alumina.

49. A device comprising:

a semiconductor light emitting device comprising a stack of semiconductor layers

including an active region;

an optical element bonded to the semiconductor light emitting device; and

a bonding layer disposed between the optical element and the semiconductor light emitting device, wherein the bonding layer comprises a material selected from the group of an oxide of lead, an oxide of tungsten, and an oxide of zinc.

50. The device of claim 49, further comprising a submount electrically connected to the light emitting device.

51. The device of claim 50, wherein the submount comprises a ceramic.

52. The device of claim 50, wherein the submount comprises a material selected from the group of AIN, alumina, and Si.

53. The device of claim 50, further comprising contact elements that electrically connect the submount to the light emitting device, wherein the contact elements are formed from a material that includes at least one of Au and AuSn.

54. The device of claim 49, wherein the optical element comprises a material selected from the group of sapphire, SiC, aluminum oxynitride, zirconia oxide, GaN, AIN, spinel, GaP, ZnS, an oxide of tellurium, an oxide of lead, an oxide of tungsten, and transparent alumina.

55-60. -60. (canceled)