Noise Decoupling Structure with Through-Substrate Vias
First Claim
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1. A device comprising:
- a substrate comprising a front surface and a back surface;
an integrated circuit device at the front surface of the substrate;
a metal plate on the back surface of the substrate, wherein the metal plate overlaps substantially an entirety of the integrated circuit device;
a guard ring extending into the substrate and encircling the integrated circuit device, wherein the guard ring is formed of a conductive material; and
a through substrate via (TSV) penetrating through the substrate and electrically coupled to the metal plate.
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Abstract
A device includes a substrate having a front surface and a back surface; an integrated circuit device at the front surface of the substrate; and a metal plate on the back surface of the substrate, wherein the metal plate overlaps substantially an entirety of the integrated circuit device. A guard ring extends into the substrate and encircles the integrated circuit device. The guard ring is formed of a conductive material. A through substrate via (TSV) penetrates through the substrate and electrically couples to the metal plate.
57 Citations
20 Claims
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1. A device comprising:
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a substrate comprising a front surface and a back surface; an integrated circuit device at the front surface of the substrate; a metal plate on the back surface of the substrate, wherein the metal plate overlaps substantially an entirety of the integrated circuit device; a guard ring extending into the substrate and encircling the integrated circuit device, wherein the guard ring is formed of a conductive material; and a through substrate via (TSV) penetrating through the substrate and electrically coupled to the metal plate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A device comprising:
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a semiconductor substrate comprising a front surface and a back surface; an integrated circuit device at the front surface of the substrate; a metal plate on the back surface of the substrate, wherein the metal plate overlaps substantially an entirety of the integrated circuit device; a first guard ring extending into the substrate and encircling the integrated circuit device, wherein the first guard ring is formed of a first well region; a deep well region directly underlying the integrated circuit device and contacting the first guard ring, wherein the first guard ring and the deep well region are of a same conductivity type; and a through substrate via (TSV) penetrating through the substrate and the deep well region, and electrically coupled to the metal plate. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A device comprising:
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a p-type semiconductor substrate; a deep n-well region in the semiconductor substrate; a p-well region over and contacting the deep well region; a guard ring formed of an n-well region in the p-type semiconductor substrate and encircling the p-well region, wherein the guard ring extends from a front surface of the p-type semiconductor substrate into the p-type semiconductor substrate, and wherein the guard ring contacts the deep n-well region; a metal plate contacting a back surface of the semiconductor substrate; and a through substrate via (TSV) penetrating through the p-type semiconductor substrate and contacting the metal plate. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification