Fluorspar/Iodide process for reduction,purificatioin, and crystallization of silicon

• US 20120082610A1
• Filed: 10/02/2010
• Published: 04/05/2012
• Est. Priority Date: 10/02/2010
• Status: Abandoned Application

• Current Assignee: Silichem LLC
• Original Assignee: Silichem LLC
• Inventors: Channon, Matthew J.
• Application Number:
  US12/924,667
• Publication Number:
  US 20120082610A1
• Time in Patent Office: Days
• US Class Current: 423/342
• CPC Class Codes: C01B 33/031 by decomposition of silicon tetraiodide
• CPC Class Codes: C01B 33/10705 Tetrafluoride
• CPC Class Codes: C01B 33/10768 Tetrabromide; Tetraiodide
• CPC Class Codes: C01B 7/14 Iodine

Abstract

Method and apparatus for producing molten purified crystalline silicon from low-grade siliceous fluorspar ore, sulfur trioxide gas, and a metallic iodide salt. Method involves: (1) initially reacting silicon dioxide-bearing fluorspar ore and sulfur trioxide gas in sulfuric acid to create silicon tetrafluoride gas and fluorogypsum; (2) reacting the product gas with a heated iodide salt to form a fluoride salt and silicon tetraiodide; (3) isolating silicon tetraiodide from impurities and purifying it by washing steps and distillation in a series of distillation columns; (4) heating the silicon tetraiodide to its decomposition temperature in a silicon crystal casting machine, producing pure molten silicon metal ready for crystallization; and pure iodine gas, extracted as liquid in a cold-wall chamber. The system is batch process-based, with continuous elements. The system operates largely at atmospheric pressure, requiring limited inert gas purges during batch changes.

Claims

1. A method of producing silicon tetrafluoride gas from the aqueous reaction of crude fluorspar and concentrated sulfuric acid, said method comprising the steps of:

(a) bubbling SO.sub.3 gas into dilute H.sub.2SO.sub.4 to produce concentrated (greater than 70% by weight) sulfuric acid and

(b) combining milled fluorspar ore or fluorspar tailings with sulfuric acid to produce a liquor of dilute sulfuric acid and fluosilicic acid, and insoluble product CaSO.sub.4 and

(c) combining the concentrated sulfuric acid from step (a) with the sulfuric/fluosilicic acid liquor from step (b) to generate silicon tetrafluoride gas and produce aforementioned dilute sulfuric acid in step (a).

2. A method according to claim 1 where the milled fluorspar ore is composed of a stoichiometric ratio of approximately 27.8 wt % CaF.sub.2 and the balance SiO.sub.2.

3. A method according to claim 1 where the milled fluorspar ore contains a non-stoichiometric ratio or other impurities with the purpose of generating byproduct gypsum and other product materials with desirable impurities to improve salability and quality.

4. A method according to claim 1 where the milled fluorspar ore contains a percentage of glass originally obtained from consumers or industry for recycling.

5. A method of producing silicon tetraiodide gas from the gas-phase reaction of silicon tetrafluoride with a halogen salt, said method comprising:

(a) Introducing SiF.sub.4 gas into a container with heated Iodine-bearing salt and

(b) Using a cold trap to capture product SiI.sub.4 from the mixed gas phase and

(c) Collecting the product salt for separation into fluoride-bearing byproduct and iodine-bearing salt for reuse

6. A method according to claim 5 where the container is airtight, nonreactive to fluoride compounds, and heated at sufficient temperature to react the Iodine-bearing salt with the Si.sub.4 gas.

7. A method according to claim 5 where the Iodine-bearing salt is in the form of LiI, BeI.sub.2, NaI, MgI.sub.2, KI, CaI.sub.2, RbI, SrI.sub.2, or a combination thereof.

8. A method according to claim 5 where the cold trap is held beneath 200 C, at a temperature suitable to cause condensation of SiI.sub.4, but not cause condensation of other intermediate compounds.

9. A method according to claim 5 where the container is designed such that the Iodine-bearing salt is heated and held in a nonreactive container within the larger container, such as a nickel crucible, to minimize risk of reaction with the larger container involving high temperatures.

10. A method according to claim 5, where the fluoride-bearing byproduct is recycled by reacting it with I.sub.2 gas to produce iodine-bearing salts.

11. A method of producing molten high purity silicon and high purity iodine gas from the purification and thermal decomposition of crude silicon tetraiodide gas, said method comprising:

(a) Repeated washing steps with nonreactive chemicals to separate impurities by boiling and freezing the crude SiI.sub.4 material and

(b) Fractional distillation of the crude SiI.sub.4 material to produce pure SiI.sub.4 material and

(c) Introduction of the SiI.sub.4 material to a heated crystallization furnace to produce molten Si metal and I2 gas and

(d) Collection of I.sub.2 gas and

(e) Crystallization of a melt of sufficient size to produce semiconductor-grade ingots, sheets, or boules suitable for wafering and further processing

12. A method according to claim 11 where the crystallization furnace uses a Czochralski, direct cast, edge-defined film growth, or string ribbon method to grow crystalline material directly from a melt.

13. A method according to claim 11 where desirable impurity iodides, comprising BI.sub.3, AlI.sub.3, PI.sub.3, GaI.sub.3, GeI.sub.4, InI.sub.3, AsI.sub.3, are separated from the crude SiI.sub.4 gas, as well as from each other, for further processing or sale.

14. A method according to claim 11, where impurity iodides can be reintroduced to the iodide gas mixture to produce silicon alloys with desirable physical or electrical properties.

15. A method according to claim 11, where SiI.sub.4 material can be isotopically purified as in a centrifuge, to produce isotopically pure silicon.

16. A method according to claim 11, where the impure byproduct SiI.sub.4 can be reused as the source to the distillation column.

17. A method according to claim 11, where the collected I.sub.2 gas is cooled and sold.

18. A method according to claim 11, where the collected I.sub.2 gas is recycled by reacting it with a metallic ore, oxide, hydroxide, carbonate, or halide to produce iodine-bearing salts.

19. A method according to claim 11, where the impure SiI.sub.4 waste material from the distillation column is run through the remainder of the system, thermally decomposed, and the remaining liquid quickly cooled, to produce an impure Si metal.

20. A method according to claim 11, where the impure SiI.sub.4 waste material from the distillation column is run through the remainder of the system, thermally decomposed, and the remaining I.sub.2 gas is recycled by reacting it with a metallic ore, oxide, hydroxide, carbonate, or halide to produce iodine-bearing salts.