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Plasma Etching Apparatus

  • US 20120085494A1
  • Filed: 12/14/2011
  • Published: 04/12/2012
  • Est. Priority Date: 02/27/2008
  • Status: Abandoned Application
First Claim
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1. A plasma etching apparatus comprising:

  • a vacuum processing chamber for performing plasma processing on a workpiece;

    a gas introduction means for introducing an etching gas to the vacuum processing chamber;

    a high frequency feeding means for feeding high-frequency power for producing plasma in the vacuum processing chamber;

    a spectroscope for measuring a spectrum of light of a specific wavelength emitted by the plasma; and

    an arithmetic unit for determining an endpoint of etching of the workpiece,wherein the arithmetic unit is provided with;

    a regression line computing unit for computing a regression line on the basis of time-sequential data of luminous intensity of the specific wavelength sampled by the spectroscope;

    a distance computing unit for computing a distance from the time-sequential data to the regression line;

    a computing unit for calculating a distance in a time-base direction by computing a slope of the regression line, and the distance from the time-sequential data to the regression line, computed by the distance computing unit; and

    an endpoint determiner for outputting an endpoint determination signal on the basis of the distance in the time-base direction computed by the computing unit.

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