Method of treating the surface of a soda lime silica glass substrate, surface-treated glass substrate, and device incorporating the same

• US 20120091475A1
• Filed: 10/15/2010
• Published: 04/19/2012
• Est. Priority Date: 10/15/2010
• Status: Active Grant

• Current Assignee: Guardian Glass LLC (KOCH Industries Incorporated)
• Original Assignee: Guardian Industries Corporation (KOCH Industries Incorporated)
• Inventors: Thomsen, Scott V.
• Granted Patent: US 8,541,792 B2
• Time in Patent Office: Days
• US Class Current: 257/88
• CPC Class Codes: C03C 17/002 for flat glass, e.g. float glass
• CPC Class Codes: C03C 17/245 by deposition from the vapour phase
• CPC Class Codes: C03C 2218/31 Pre-treatment
• CPC Class Codes: C23C 14/08 Oxides C23C14/10 takes precedence
• CPC Class Codes: C23C 14/3442 using an ion beam
• CPC Class Codes: G02F 1/133302 Rigid substrates, e.g. inorganic substrates
• CPC Class Codes: G02F 1/133337 Layers preventing ion diffusion, e.g. by ion absorption
• CPC Class Codes: G02F 2202/09 inorganic glass

Abstract

Certain example embodiments of this invention relate to methods of treating the surface of a soda lime silica glass substrate, e.g., a soda lime silica alkali ion glass substrate, and the resulting surface-treated glass articles. More particularly, certain example embodiments of this invention relate to methods of removing a top surface portion of a glass substrate using ion sources. During or after removal of this portion, the glass may then be coated with another layer, to be used as a capping layer. In certain example embodiments, the glass substrate coated with a capping layer may be used as a color filter and/or TFT substrate in an electronic device. In other example embodiments, the glass substrate with the capping layer thereon may be used in a variety of display devices.

Claims

1. A method of making a coated article, the method comprising:

ion beam milling substantially an entire surface of a glass substrate using at least a first ion source, so as to reduce the thickness of the substrate by at least about 100 Angstroms, wherein the glass substrate comprises from about 67-75% SiO₂, about 6-20% Na₂O, and about 5-15% CaO; and

forming at least one layer comprising AlSiO_x via ion beam assisted deposition (IBAD), on at least a portion of the ion beam milled surface of the substrate during or following said ion beam milling, wherein said IBAD uses at least one sputtering target and at least a second ion source.

2. The method of claim 1, wherein the layer comprising AlSiO_x is deposited from an Al and Si inclusive target.

3. The method of claim 2, wherein the layer comprising AlSiO_x has a thickness of from about 200 to 300 Angstroms.

4. The method of claim 1, wherein the layer comprising AlSiO_x has an index of refraction of no greater than about 1.55.

5. The method of claim 4, wherein the layer comprising AlSiO_x has an optical extinction coefficient k of about 0.

6. The method of claim 1, wherein said ion beam milling reduces the thickness of the substrate by from about 150 to 250 Angstroms.

7. The method of claim 1, wherein the thickness of the layer comprising AlSiO_x is substantially the same as the thickness by which the substrate was reduced as a result of said ion beam milling.

8. The method of claim 1, wherein the thickness of the layer comprising AlSiO_x is greater than the thickness by which the substrate was reduced as a result said ion beam milling.

9. The method of claim 1, wherein the IBAD involves argon ions.

10. The method of claim 1, wherein the glass substrate is a soda lime silica low iron glass substrate.

11. A method of making an electronic display device, the method comprising:

making a coated article according to the method of claim 1;

making a TFT substrate using the coated article as a base thereof;

providing a color filter substrate; and

disposing a layer of liquid crystal material between the color filter substrate and the TFT substrate.

12. A method of making an electronic display device, the method comprising:

making a coated article according to the method of claim 1;

making a color filter substrate using the coated article as a base thereof;

providing a TFT substrate; and

disposing a layer of liquid crystal material between the color filter substrate and the TFT substrate.

13. A method of making an electronic display device, the method comprising:

making a first coated article according to the method of claim 1;

making a TFT substrate using the first coated article as a base thereof;

making a second coated article according to the method of claim 1;

making a TFT substrate using the second coated article as a base thereof; and

disposing a layer of liquid crystal material between the color filter substrate and the TFT substrate.

14. A method of making an electronic device, the method comprising:

ion beam milling, in an Ar and O₂ inclusive environment, substantially an entire surface of a glass substrate using a plurality of first ion sources, so as to reduce the thickness of the substrate by at least about 100 Angstroms;

forming at least one silicon-inclusive layer via ion beam assisted deposition (IBAD) on at least a portion of the ion beam milled surface of the substrate following said ion beam milling; and

building the substrate, once milled and having the silicon-inclusive layer formed thereon, into an electronic device,

wherein said IBAD is performed in an Ar and O₂ inclusive environment and involves plural sputtering targets, each said sputtering target having a respective second ion source associated therewith.

15. The method of claim 14, wherein the silicon-inclusive layer comprises AlSiO_x and has a refractive index less than or equal to 1.55 and an optical extinction coefficient k of about 0, the AlSiO_x-based layer having a thickness of 200-300 Angstroms.

16. The method of claim 15, wherein said ion beam milling and the deposition of the silicon-inclusive layer result in at least about 90% of alkali and alkaline ions, and sulfates, carbonates being prevented from migrating from the substrate into any functional layers of the device as compared to a situation where the substrate is not ion beam milled and where the silicon-inclusive layer is not deposited.

17. The method of claim 15, wherein said ion beam milling and the deposition of the silicon-inclusive layer result in at least about 95% of alkali and alkaline ions, and sulfates, carbonates being prevented from migrating from the substrate into any functional layers of the device as compared to a situation where the substrate is not ion beam milled and where the silicon-inclusive layer is not deposited.

18. The method of claim 14, wherein the glass substrate is a low iron glass substrate.

19. The method of claim 14, wherein substrate is used as the TFT substrate for the electronic device.

20. An electronic device including a TFT and/or a color filter substrate, the TFT and/or color filter substrate comprising:

a glass substrate comprising from about 67-75% SiO₂, about 6-20% Na₂O, and about 5-15% CaO, wherein a surface portion of the glass substrate has been milled to remove at least about 150 Angstroms; and

an ion beam assisted-deposited layer of or including AlSiO_x located over and contacting the milled surface portion of the glass substrate, the layer of or including AlSiO_x having a refractive index less than or equal to 1.55 and an optical extinction coefficient k of about 0, the AlSiO_x being 200-300 Angstroms thick.