Radiation-Emitting Optical Component

• US 20120091491A1
• Filed: 10/18/2011
• Published: 04/19/2012
• Est. Priority Date: 03/15/2001
• Status: Active Grant

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Jacob, Ulrich, Kräuter, Gertrud, Plössl, Andreas
• Granted Patent: US 8,723,207 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/54 having a particular shape

Abstract

A radiation-emitting semiconductor component, having a layer structure which includes an active layer which, in operation, emits radiation with a spectral distribution, and electrical contacts for applying a current to the layer structure, includes a coating layer which at least partially surrounds the active layer and holds back a short-wave component of the emitted radiation.

Claims

1. A radiation-emitting semiconductor component, comprising:

a layer structure which includes an active layer which, in operation, emits radiation with a spectral distribution;

electrical contacts for applying a current to the layer structure; and

a coating layer which at least partially surrounds the active layer and holds back a short-wave component of the emitted radiation,

wherein the layer structure has a top face and side faces, and the coating layer substantially completely covers the top face and at least one side face of the layer structure, and

wherein the coating layer is conductive and is surrounded by a first one of the electrical contacts for the application of current.

2. The radiation-emitting semiconductor component as claimed in claim 1, wherein the coating layer substantially completely covers the side faces of the layer structure.

7. A radiation-emitting optical component having the radiation-emitting semiconductor component as claimed in claim 1,

in which the semiconductor component is encapsulated by a material which is transparent to the longer-wave component of the emitted radiation, and the coating layer is arranged between the active layer of the semiconductor component and the transparent encapsulation material.

9. The radiation-emitting optical component as claimed in claim 7, in which the transparent material is selected from the group consisting of epoxy resin, epoxy molding compounds and acrylates.

11. The radiation-emitting semiconductor component as claimed in claim 1, in which the active layer emits radiation in the blue and ultraviolet spectral regions, and the coating layer holds back radiation in the ultraviolet spectral region and transmits radiation in the blue spectral region.

3. A radiation-emitting semiconductor component, comprising:

a layer structure which includes an active layer which, in operation, emits radiation with a spectral distribution;

electrical contacts for applying a current to the layer structure; and

a coating layer which at least partially surrounds the active layer and holds back a short-wave component of the emitted radiation,

wherein the layer structure has a top face and side faces, and the coating layer substantially completely covers the top face and at lest one side face of the layer structure, and

wherein the coating layer is formed by an ITO layer with a thickness in the range from 100 to 1500 nm.

4. The radiation-emitting semiconductor component as claimed in claim 3, wherein the coating layer substantially completely covers the side faces of the layers structure.

5. The radiation-emitting semiconductor component as claimed in claim 3, wherein the coating layer is formed by an ITO layer with a thickness in the range from 300 to 1000 nm.

6. The radiation-emitting semiconductor component as claimed in claim 5, wherein the coating layer substantially completely covers the side faces of the layer structure.

8. A radiation-emitting optical component having the radiation-emitting semiconductor component as claimed in claim 3,

in which the semiconductor component is encapsulated by a material which is transparent to the longer-wave component of the emitted radiation, and the coating layer is arranged between the active layer of the semiconductor component and the transparent encapsulation material.

10. The radiation-emitting optical component as claimed in claim 8, in which the transparent material is selected from the group consisting of epoxy resin, epoxy molding compounds and acrylates.

12. A radiation-emitting semiconductor component, comprising:

a substrate;

a semiconductor layer structure which includes an active semiconductor layer which, in operation, emits radiation with a spectral distribution;

electrical contacts for applying a current to the layer structure and to a connection pad; and

a coating layer which at least partially surrounds the active semiconductor layer and comprises a stack of electrically insulating layers to form an interference edge cut-off filter, the coating layer being operable to substantially hold back a short-wave component and to virtually unimpairedly transmit a longer-wave component of the radiation emitted by the active semiconductor layer,

wherein a majority of the emitted radiation is emitted through a top face of the semiconductor layer structure remote from the substrate,

wherein the longer-wave component transmitted by the coating layer comprises a dominant wavelength of the radiation emitted by the active semiconductor layer, and

wherein the coating layer is in direct contact with the top face of the semiconductor layer structure, and

wherein the coating layer completely covers the top face of the semiconductor layer structure and side faces of the semiconductor layer structure apart from a region of the top face that is provided with the connection pad.

13. The radiation-emitting semiconductor component as claimed in claim 12, in which the active layer emits radiation in the blue and ultraviolet spectral regions, and the coating layer holds back radiation in the ultraviolet spectral region and transmits radiation in the blue spectral region.

14. The radiation-emitting semiconductor component as claimed in claim 12, in which the coating layer reflects radiation with a wavelength of less than approximately 430 nm.

15. The radiation-emitting optical component having the radiation-emitting semiconductor component as claimed in claim 12,

in which the semiconductor component is encapsulated by a material which is transparent to the longer-wave component of the emitted radiation, and the coating layer is arranged between the active layer of the semiconductor component and the transparent encapsulation material.

16. The radiation-emitting optical component as claimed in claim 12, in which the transparent material is selected from the group consisting of epoxy resin, epoxy molding compounds and acrylates.

17. The radiation-emitting semiconductor component as claimed in claim 12, in which the coating layer comprises an alternating layer sequence of TiO₂ and SiO₂ layers.

18. The radiation-emitting semiconductor component as claimed in claim 14, in which the radiation transmitted by the coating layer comprises radiation with a wavelength between approximately 450 nm and approximately 470 nm.

19. The radiation-emitting semiconductor component as claimed in claim 18, in which the active layer emits a dominant wavelength of approximately 460-470 nm.

20. The radiation-emitting semiconductor component as claimed in claim 14, wherein the coating layer holds back radiation with a wavelength of less than approximately 420 nm.