HIGH LIGHT EXTRACTION EFFICIENCY NITRIDE BASED LIGHT EMITTING DIODE BY SURFACE ROUGHENING
First Claim
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1. A method for fabricating a III-nitride light emitting diode (LED), comprising:
- texturing at least one surface of the LED oriented along a semipolar or nonpolar plane to form a textured surface for increasing light extraction efficiency through the textured surface.
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Abstract
A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.
36 Citations
24 Claims
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1. A method for fabricating a III-nitride light emitting diode (LED), comprising:
texturing at least one surface of the LED oriented along a semipolar or nonpolar plane to form a textured surface for increasing light extraction efficiency through the textured surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 18, 19, 20, 21)
- 13. A device comprising a III-nitride light emitting diode (LED), wherein at least one surface of the LED oriented along a semipolar or nonpolar plane comprises a textured surface for increasing light extraction efficiency through the textured surface.
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