SEMICONDUCTOR STRUCTURES INCLUDING POLYMER MATERIAL PERMEATED WITH METAL OXIDE
First Claim
1. A semiconductor device structure comprising:
- at least one trench in an insulative material overlying a substrate; and
a plurality of structural domains within the at least one trench, each structural domain of the plurality of structural domains substantially equally laterally spaced from at least one other structural domain of the plurality of structural domains and comprising at least one polymer block permeated with a metal oxide.
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Accused Products
Abstract
Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly. A block copolymer at least within a trench in the substrate and including at least one soluble block and at least one insoluble block may be annealed to form a self-assembled pattern including a plurality of repeating units of the at least one soluble block laterally aligned with the trench and positioned within a matrix of the at least one insoluble block. The self-assembled pattern may be exposed to a metal oxide precursor that impregnates the at least one soluble block. The metal oxide precursor may be oxidized to form a metal oxide. The self-assembled pattern may be removed to form a pattern of metal oxide lines on the substrate surface. Semiconductor device structures are also described.
43 Citations
20 Claims
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1. A semiconductor device structure comprising:
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at least one trench in an insulative material overlying a substrate; and a plurality of structural domains within the at least one trench, each structural domain of the plurality of structural domains substantially equally laterally spaced from at least one other structural domain of the plurality of structural domains and comprising at least one polymer block permeated with a metal oxide. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A semiconductor device structure comprising:
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a plurality of structural domains within at least one trench in an insulative material overlying a substrate, each structural domain of the plurality of structural domains comprising; a polymer material; and a metal oxide within the polymer material; and a matrix at least partially surrounding each structural domain of the plurality of structural domains. - View Dependent Claims (14, 15, 16, 17)
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18. A semiconductor device structure comprising:
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an insulative material over a substrate; a plurality of polymer blocks within at least one trench in the insulative material; and a metal oxide within at least one polymer block of the plurality of polymer blocks. - View Dependent Claims (19, 20)
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Specification