WAFER MOLD MATERIAL AND METHOD FOR MANUFACTURING SEMICONDUCTOR APPARATUS

• US 20120139131A1
• Filed: 11/15/2011
• Published: 06/07/2012
• Est. Priority Date: 12/03/2010
• Status: Abandoned Application

• Current Assignee: Shin-Etsu Chemical Company Limited
• Original Assignee: Shin-Etsu Chemical Company Limited
• Inventors: SUGO, Michihiro, KONDO, Kazunori, KATO, Hideto
• Application Number:
  US13/296,648
• Publication Number:
  US 20120139131A1
• Time in Patent Office: Days
• US Class Current: 257/787
• CPC Class Codes: C08G 77/14 containing silicon bound to oxygen-containing groups C08G77/045 takes precedence
• CPC Class Codes: C08G 77/455 containing polyamide, polyesteramide or polyimide sequences
• CPC Class Codes: C08L 33/20 Homopolymers or copolymers of acrylonitrile C08L55/02 takes precedence
• CPC Class Codes: C08L 63/00 Compositions of epoxy resins; Compositions of derivatives of epoxy resins
• CPC Class Codes: C08L 83/06 containing silicon bound to oxygen-containing groups C08L83/12 takes precedence
• CPC Class Codes: C08L 83/10 Block- or graft-copolymers containing polysiloxane sequences obtained by polymerising a compound having a carbon-to-carbon double bond on to a polysiloxane C08L51/08, C08L53/00
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/81 using a bump connector
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/295 containing a filler H01L23/296 takes precedence
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/15311 being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/181 Encapsulation

Abstract

The invention provides a wafer mold material for collectively subjecting a wafer having semiconductor devices on a surface thereof to resin molding, wherein the wafer mold material has a resin layer containing a filler and at least any one of an acrylic resin, a silicone resin having an epoxy group, an urethane resin, and a polyimide silicone resin, and the wafer mold material is formed into a film-like shape. There can be a wafer mold material that enables collective molding (wafer molding) with respect to a wafer having semiconductor devices formed thereon, has excellent transference performance with respect to a large-diameter thin-film wafer, can provide a flexible hardened material with low-stress properties, and can be preferably used as a mold material in a wafer level package with less warp of a formed (molded) wafer.

Claims

1. A wafer mold material for collectively subjecting a wafer having semiconductor devices on a surface thereof to resin molding,

wherein the wafer mold material has a resin layer containing a filler and at least any one of an acrylic resin, a silicone resin having an epoxy group, an urethane resin, and a polyimide silicone resin, and the wafer mold material is formed into a film-like shape.

2. The wafer mold material according to claim 1, wherein a film thickness of the resin layer is 20 microns to 500 microns.

3. The wafer mold material according to claim 1, wherein the resin layer is formed on a support film, and a protective film is provided on the resin layer.

4. The wafer mold material according to claim 2, wherein the resin layer is formed on a support film, and a protective film is provided on the resin layer.

5. The wafer mold material according to claim 1, wherein a storage elastic modulus of the resin layer at 25°

C. after hardening is not greater than 1 GPa.

6. The wafer mold material according to claim 2, wherein a storage elastic modulus of the resin layer at 25°

C. after hardening is not greater than 1 GPa.

7. The wafer mold material according to claim 3, wherein a storage elastic modulus of the resin layer at 25°

C. after hardening is not greater than 1 GPa.

8. The wafer mold material according to claim 4, wherein a storage elastic modulus of the resin layer at 25°

C. after hardening is not greater than 1 GPa.

9. A method for manufacturing a semiconductor apparatus comprising at least:

a transferring step of transferring the film-like wafer mold material according to claim 1 onto a wafer having semiconductor devices on a surface thereof;

a heating step of heating the transferred wafer mold material; and

a piece forming step of cutting the wafer together with the wafer mold material into each piece, the wafer having semiconductor devices on the surface thereof having the heated wafer mold material.

10. A method for manufacturing a semiconductor apparatus comprising at least:

a transferring step of transferring the film-like wafer mold material according to claim 2 onto a wafer having semiconductor devices on a surface thereof;

a heating step of heating the transferred wafer mold material; and

a piece forming step of cutting the wafer together with the wafer mold material into each piece, the wafer having semiconductor devices on the surface thereof having the heated wafer mold material.

11. A method for manufacturing a semiconductor apparatus comprising at least:

a transferring step of transferring the film-like wafer mold material according to claim 3 onto a wafer having semiconductor devices on a surface thereof;

a heating step of heating the transferred wafer mold material; and

a piece forming step of cutting the wafer together with the wafer mold material into each piece, the wafer having semiconductor devices on the surface thereof having the heated wafer mold material.

12. A method for manufacturing a semiconductor apparatus comprising at least:

a transferring step of transferring the film-like wafer mold material according to claim 4 onto a wafer having semiconductor devices on a surface thereof;

a heating step of heating the transferred wafer mold material; and

a piece forming step of cutting the wafer together with the wafer mold material into each piece, the wafer having semiconductor devices on the surface thereof having the heated wafer mold material.

13. A method for manufacturing a semiconductor apparatus comprising at least:

a transferring step of transferring the film-like wafer mold material according to claim 5 onto a wafer having semiconductor devices on a surface thereof;

a heating step of heating the transferred wafer mold material; and

a piece forming step of cutting the wafer together with the wafer mold material into each piece, the wafer having semiconductor devices on the surface thereof having the heated wafer mold material.

14. A method for manufacturing a semiconductor apparatus comprising at least:

a transferring step of transferring the film-like wafer mold material according to claim 6 onto a wafer having semiconductor devices on a surface thereof;

a heating step of heating the transferred wafer mold material; and

a piece forming step of cutting the wafer together with the wafer mold material into each piece, the wafer having semiconductor devices on the surface thereof having the heated wafer mold material.

15. A method for manufacturing a semiconductor apparatus comprising at least:

a transferring step of transferring the film-like wafer mold material according to claim 7 onto a wafer having semiconductor devices on a surface thereof;

a heating step of heating the transferred wafer mold material; and

a piece forming step of cutting the wafer together with the wafer mold material into each piece, the wafer having semiconductor devices on the surface thereof having the heated wafer mold material.

16. A method for manufacturing a semiconductor apparatus comprising at least:

a transferring step of transferring the film-like wafer mold material according to claim 8 onto a wafer having semiconductor devices on a surface thereof;

a heating step of heating the transferred wafer mold material; and

a piece forming step of cutting the wafer together with the wafer mold material into each piece, the wafer having semiconductor devices on the surface thereof having the heated wafer mold material.