METHOD OF THERMAL PROCESSING STRUCTURES FORMED ON A SUBSTRATE

• US 20120145684A1
• Filed: 02/21/2012
• Published: 06/14/2012
• Est. Priority Date: 03/08/2006
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Carey, Paul, Hunter, Aaron Muir, Jennings, Dean, Mayur, Abhilash J., Moffatt, Stephen, Schaffer, William, Thomas, Timothy N., Yam, Mark
• Granted Patent: US 8,518,838 B2
• Time in Patent Office: Days
• US Class Current: 219/121.65
• CPC Class Codes: H01L 21/26506 in group IV semiconductors
• CPC Class Codes: H01L 21/26513 of electrically active species
• CPC Class Codes: H01L 21/268 using electromagnetic radiation, e.g. laser radiation
• CPC Class Codes: H01L 21/324 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/20 - H01L21/288 and H01L21/302 - H01L21/322 take precedence
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/823418 with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
• CPC Class Codes: H01L 29/0653 adjoining the input or output region of a field-effect device, e.g. the source or drain region
• CPC Class Codes: H01L 29/6659 with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
• CPC Class Codes: H01L 29/66659 with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Abstract

Methods used to perform an annealing process on desired regions of a substrate are disclosed. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

Claims

1. An apparatus for thermally processing a semiconductor substrate, comprising:

a substrate support comprising a heat exchanging device;

a first intense light source positioned to deliver a first amount of annealing energy to an anneal region;

a second intense light source positioned to deliver a second amount of annealing energy to the anneal region;

a first controller coupled to the heat exchange device; and

a second controller coupled to the first controller, the first intense light source, and the second intense light source.

2. The apparatus of claim 1, further comprising one or more channels formed within the substrate support and in thermal communication with the heat exchanging device.

3. The apparatus of claim 1, further comprising a movable stage attached to the substrate support.

4. The apparatus of claim 1, wherein each of the first intense light source and the second intense light source delivers radiation at a wavelength between about 500 nm and about 11 micrometers.

5. The apparatus of claim 1, wherein the second controller controls combination of the first amount of anneal energy and the second amount of anneal energy.

6. An apparatus for thermally processing a semiconductor substrate, comprising:

a substrate support comprising a heat exchanging device;

a first intense light source positioned to deliver a first amount of annealing energy to an anneal region;

a second intense light source positioned to deliver a second amount of annealing energy, combined with the first amount of anneal energy, to the anneal region;

a first controller coupled to the heat exchange device;

a second controller coupled to the first controller, the first intense light source, and the second intense light source to control combination of the first amount of anneal energy and the second amount of anneal energy; and

one or more microlenses disposed between the first and second intense light sources and the substrate support.

7. The apparatus of claim 6, wherein the first intense light source is a pulsed laser and the second intense light source is a pulsed laser.

8. The apparatus of claim 6, further comprising one or more channels formed within the substrate support and in thermal communication with the heat exchanging device.

9. The apparatus of claim 8, further comprising a movable stage attached to the substrate support.

10. The apparatus of claim 9, wherein the first intense light source is a pulsed laser and the second intense light source is a pulsed laser.

11. The apparatus of claim 10, wherein each of the one or more channels is a fluid channel.

12. An apparatus for thermally processing a semiconductor substrate, comprising:

a first pulsed laser and a second pulse laser positioned to produce a combined pulse;

one or more microlenses positioned to receive the combined pulse;

a substrate support comprising a heat exchanging device;

a first controller coupled to the heat exchange device; and

a second controller coupled to the first controller, the first pulsed laser, and the second pulsed laser.

13. The apparatus of claim 12, further comprising one or more channels formed within the substrate support and in thermal communication with the heat exchanging device.

14. The apparatus of claim 13, further comprising a movable stage attached to the substrate support.

15. The apparatus of claim 14, wherein the first pulsed laser and the second pulsed laser each delivers radiation at a wavelength between about 500 nm and about 11 micrometers.

16. The apparatus of claim 15, wherein each of the one or more channels is a fluid channel.