Device using oxide semiconductor, display device, and electronic apparatus

• US 20120146036A1
• Filed: 10/17/2011
• Published: 06/14/2012
• Est. Priority Date: 12/13/2010
• Status: Active Grant

• Current Assignee: JDI Design and Development GK
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Minami, Tetsuo, Uchino, Katsuhide
• Granted Patent: US 8,476,628 B2
• Time in Patent Office: Days
• US Class Current: 257/59
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence

Abstract

Disclosed herein is a device using an oxide semiconductor, the device including a circuit part configured to include a thin film transistor using the oxide semiconductor as a channel material, wherein the circuit part has a lower interconnect, an upper interconnect, and an interlayer insulating film, the interlayer insulating film includes an oxide semiconductor layer and a channel protective layer, and the channel protective layer is interposed between an outer circumferential surface of a rising part of the oxide semiconductor layer corresponding to thickness of the lower interconnect and the upper interconnect.

Claims

1. A device using an oxide semiconductor, the device comprising

a circuit part configured to include a thin film transistor using the oxide semiconductor as a channel material, wherein

the circuit part has

a lower interconnect formed in the same process as a process of a gate electrode of the thin film transistor,

an upper interconnect intersecting the lower interconnect, and

an interlayer insulating film provided between the lower interconnect and the upper interconnect,

the interlayer insulating film includes

an oxide semiconductor layer and

a channel protective layer,

the oxide semiconductor layer and the channel protective layer being stacked over the lower interconnect with intermediary of a gate insulating film in the same processes as processes of a channel layer and a channel protective layer of the thin film transistor, and

the channel protective layer is interposed between an outer circumferential surface of a rising part of the oxide semiconductor layer corresponding to thickness of the lower interconnect and the upper interconnect.

2. The device using an oxide semiconductor according to claim 1, wherein

a peripheral end of the oxide semiconductor layer is electrically short-circuited with the upper interconnect.

3. The device using an oxide semiconductor according to claim 2, wherein

the peripheral end of the oxide semiconductor layer exists at the same outer circumferential position as an outer circumferential position of a peripheral end of the channel protective layer.

4. The device using an oxide semiconductor according to claim 1, wherein

a peripheral end of the oxide semiconductor layer is electrically insulated from the upper interconnect.

5. A device using an oxide semiconductor, the device comprising

a circuit part configured to include a thin film transistor using the oxide semiconductor as a channel material, wherein

the circuit part has

a lower interconnect formed in the same process as a process of a gate electrode of the thin film transistor,

an upper interconnect intersecting the lower interconnect, and

an interlayer insulating film provided between the lower interconnect and the upper interconnect, and

the interlayer insulating film is formed by stacking an oxide semiconductor layer and a channel protective layer over the lower interconnect with intermediary of a gate insulating film in the same processes as processes of a channel layer and a channel protective layer of the thin film transistor and removing the oxide semiconductor layer after the stacking.

6. A device using an oxide semiconductor, the device comprising

a circuit part configured to include a thin film transistor, wherein

the circuit part has

a lower interconnect formed by using the same material as a material of a gate electrode of the thin film transistor,

an upper interconnect intersecting the lower interconnect, and

an interlayer insulating film provided between the lower interconnect and the upper interconnect,

the interlayer insulating film includes

an oxide semiconductor layer and

a protective layer,

the oxide semiconductor layer and the protective layer being stacked over the lower interconnect with intermediary of a gate insulating film by using the same materials as materials of a channel layer and a channel protective layer of the thin film transistor, and

the protective layer is interposed between an outer circumferential surface of a rising part of the oxide semiconductor layer and the upper interconnect.

8. The display device according to claim 6, wherein

the circuit part is mounted on the same substrate as a substrate of the pixel array part.

10. The display device according to claim 8, wherein

the circuit part is mounted on the same substrate as a substrate of the pixel array part.

7. A display device comprising:

a pixel array part configured to be formed by arranging pixels each including an electrooptical element; and

a circuit part configured to include a thin film transistor using an oxide semiconductor as a channel material, wherein

the circuit part has

a lower interconnect formed in the same process as a process of a gate electrode of the thin film transistor,

an upper interconnect intersecting the lower interconnect, and

an interlayer insulating film provided between the lower interconnect and the upper interconnect,

the interlayer insulating film includes

an oxide semiconductor layer and

a channel protective layer,

the oxide semiconductor layer and the channel protective layer being stacked over the lower interconnect with intermediary of a gate insulating film in the same processes as processes of a channel layer and a channel protective layer of the thin film transistor, and

the channel protective layer is interposed between an outer circumferential surface of a rising part of the oxide semiconductor layer corresponding to thickness of the lower interconnect and the upper interconnect.

9. A display device comprising:

a pixel array part configured to be formed by arranging pixels each including an electrooptical element; and

a circuit part configured to include a thin film transistor using an oxide semiconductor as a channel material, wherein

the circuit part has

a lower interconnect formed in the same process as a process of a gate electrode of the thin film transistor,

an upper interconnect intersecting the lower interconnect, and

an interlayer insulating film provided between the lower interconnect and the upper interconnect, and

the interlayer insulating film is formed by stacking an oxide semiconductor layer and a channel protective layer over the lower interconnect with intermediary of a gate insulating film in the same processes as processes of a channel layer and a channel protective layer of the thin film transistor and removing the oxide semiconductor layer after the stacking.

11. Electronic apparatus having a display device comprising:

a pixel array part configured to be formed by arranging pixels each including an electrooptical element; and

a circuit part configured to include a thin film transistor using an oxide semiconductor as a channel material, wherein

the circuit part has

a lower interconnect formed in the same process as a process of a gate electrode of the thin film transistor,

an upper interconnect intersecting the lower interconnect, and

an interlayer insulating film provided between the lower interconnect and the upper interconnect,

the interlayer insulating film includes

an oxide semiconductor layer and

a channel protective layer,

the oxide semiconductor layer and the protective layer being stacked over the lower interconnect with intermediary of a gate insulating film by using the same materials as materials of a channel layer and a channel protective layer of the thin film transistor, and

the channel protective layer is interposed between an outer circumferential surface of a rising part of the oxide semiconductor layer corresponding to thickness of the lower interconnect and the upper interconnect.

12. Electronic apparatus having a display device comprising:

a pixel array part configured to be formed by arranging pixels each including an electrooptical element; and

a circuit part configured to include a thin film transistor using an oxide semiconductor as a channel material, wherein

the circuit part has

a lower interconnect formed in the same process as a process of a gate electrode of the thin film transistor,

an upper interconnect intersecting the lower interconnect, and

an interlayer insulating film provided between the lower interconnect and the upper interconnect, and

the interlayer insulating film is formed by stacking an oxide semiconductor layer and a channel protective layer over the lower interconnect with intermediary of a gate insulating film in the same processes as processes of a channel layer and a channel protective layer of the thin film transistor and removing the oxide semiconductor layer after the stacking.