APPARATUS AND METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR, AND COMPOUND SEMICONDUCTOR MANUFACTURED THEREBY

• US 20120146191A1
• Filed: 02/23/2012
• Published: 06/14/2012
• Est. Priority Date: 08/31/2009
• Status: Active Grant

• Current Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Showa Denko KK
• Inventors: YASUHARA, Hideki, BANDOH, Akira
• Granted Patent: US 8,753,448 B2
• Time in Patent Office: Days
• US Class Current: 257/615
• CPC Class Codes: C23C 16/303 Nitrides
• CPC Class Codes: C23C 16/4583 the substrate being supported substantially horizontally
• CPC Class Codes: C23C 16/4584 the substrate being rotated
• CPC Class Codes: C23C 16/4585 Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/02579 P-type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/68735 characterised by edge profile or support profile
• CPC Class Codes: H01L 21/68764 characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
• CPC Class Codes: H01L 21/68771 characterised by supporting more than one semiconductor substrate

Abstract

Provided is an apparatus for manufacturing a compound semiconductor by use of metal organic chemical vapor deposition including: a reaction container; a holder on which a formed body is to be placed so that a formed surface of the formed body on which layers of a compound semiconductor are to be formed faces upward, the holder being arranged in the reaction container; and a material supply port supplying a material gas of the compound semiconductor into the reaction container from outside, wherein the holder includes a support member supporting the formed body so that an undersurface of the formed body and a top surface of the holder on which the formed body is to be placed keep a predetermined distance.

Claims

1. An apparatus for manufacturing a compound semiconductor by use of metal organic chemical vapor deposition comprising:

a reaction container;

a holder on which a formed body is to be placed so that a formed surface of the formed body on which layers of a compound semiconductor are to be formed faces upward, the holder being arranged in the reaction container; and

a material supply port supplying a material gas of the compound semiconductor into the reaction container from outside, wherein

the holder includes a support member supporting the formed body so that an undersurface of the formed body and a top surface of the holder on which the formed body is to be placed keep a predetermined distance.

2. The apparatus according to claim 1, wherein the support member of the holder is inserted into at least three locations of a circumferential edge of the holder on which the formed body is to be placed.

3. The apparatus according to claim 1, wherein the support member of the holder is mounted in the form of a ring on a circumferential edge of the holder on which the formed body is to be placed.

4. The apparatus according to claim 1, wherein the support member of the holder includes:

a support surface for supporting an outer circumferential edge of the undersurface of the formed body; and

an inclined surface configured to form a predetermined angle with respect to the support surface.

5. The apparatus according to claim 4, wherein the support surface of the support member has such a predetermined height that the top surface of the holder on which the formed body is placed does not come into contact with the undersurface of the formed body supported by the support surface.

6. The apparatus according to claim 1, wherein the support member of the holder is made of a material having a coefficient of thermal conductivity of 10 W/(m·

K) or less.

7. The apparatus according to claim 6, wherein the support member of the holder is made of one selected from the group consisting of alumina (Al₂O₃), silicon nitride (Si₃N₄), silica glass (SiO₂) and zirconia (ZrO₂).

8. The apparatus according to claim 1, wherein the compound semiconductor is a group III nitride semiconductor.

9. A method for manufacturing a compound semiconductor in a reaction container by use of metal organic chemical vapor deposition, the method comprising the steps of:

arranging a support member on a holder, and further placing a formed body so that a formed surface of the formed body on which layers of a compound semiconductor are to be formed through epitaxial growth faces upward and that a back surface of the formed body does not come into contact with a top surface of the holder, the support member supporting the formed body and inhibiting heat conduction from the holder to an outer circumferential side surface of the formed body;

installing the holder having the formed body placed thereon in the reaction container so as to be rotatable; and

supplying a material gas of the compound semiconductor into the reaction container in which the holder is installed.

10. The method according to claim 9, wherein the formed body is placed on the support member inserted into at least three locations of a circumferential edge of the holder.

11. The method according to claim 9, wherein the support member is mounted in the form of a ring on a circumferential edge of the holder on which the formed body is to be placed.

12. The method according to claim 9, wherein the support member is made of a material having a coefficient of thermal conductivity of 10 W/(m·

K) or less.

13. The method according to claim 12, wherein the support member is made of one selected from the group consisting of alumina (Al₂O₃), silicon nitride (Si₃N₄), silica glass (SiO₂) and zirconia (ZrO₂).

14. The method according to claim 9, wherein the formed body is placed on the support member so that the outer circumferential side surface thereof does not come into contact with the support member.

15. The method according to claim 9, wherein the formed body is heated between 700 degrees C. and 1200 degrees C., both inclusive.

16. The method according to claim 9, wherein the compound semiconductor is a group III nitride semiconductor.

17. A compound semiconductor manufactured by the method according to claim 9.